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HAT1055RJ - Silicon P-Channel Power MOSFET

Download the HAT1055RJ datasheet PDF. This datasheet also covers the HAT1055R variant, as both devices belong to the same silicon p-channel power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Low on-resistance Capable of 4.5 V gate drive High density mounting “J” is for Automotive.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HAT1055R_RenesasTechnology.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HAT1055RJ
Manufacturer Renesas
File Size 149.04 KB
Description Silicon P-Channel Power MOSFET
Datasheet download datasheet HAT1055RJ Datasheet

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Other Datasheets by Renesas

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HAT1055R Silicon P-Channel Power MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HAT1055R, HAT1055RJ Silicon P Channel Power MOS FET High Speed Power Switching REJ03G0067-0100Z Rev.1.00 Aug.29.2003 www.DataSheet4U.com Features • • • • Low on-resistance Capable of 4.5 V gate drive High density mounting “J” is for Automotive application High temperature D-S leakage guarantee Avalanche rating Outline SOP-8 8 5 7 6 3 1 2 7 8 D D 5 6 D D 4 2 G 4 G S1 S3 1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain MOS1 MOS2 Rev.1.00, Aug.29.2003, page 1 of 9 HAT1055R, HAT1055RJ Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings HAT1055R Drain to source voltage Gate to source voltage Drain current www.DataSheet4U.com Unit HAT1055RJ –60 ±20 –5 –40 –5 2.