HAT1055RJ Datasheet | Renesas

Features - - - - Low on-resistance Capable of 4.5 V gate drive High density mounting “J” is for Automotive application High temperature D-S leakage guarantee Avalanche rating Outline SOP-8 8 5 7 6 3 1 2 7 8 D D 5 6 D D 2 G 4 G S1 S3 1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain MOS1 MOS2 Rev.1.00, Aug.29.2003, page 1 of 9 HAT1055R, HAT1055RJ Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings HAT1055R Drain to source voltage Gate to source voltage Drain current .. Unit HAT1055RJ - 60 ±20 - 5 - 40 - 5 2.14 2 3 150 - 55 to +150 V V A A A m J W W °C °C VDSS VGSS ID ID (pulse) IAP Note4 Note4 EAR Note1 - 60 ±20 - 5 - 40 - - 2 3 150 - 55 to +150 Drain peak current Avalanche current Avalanche energy Channel dissipation Channel dissipation Channel temperature Storage temperature Notes: 1. 2. 3. 4. Pch Note2 Pch Note3 Tch Tstg PW ≤ 10µs, duty cycle ≤ 1% 1 Drive operation: When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10 s 2 Drive operation: When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10 s Value at Tch = 25°C, Rg ≥ 50 Ω Rev.1.00, Aug.29.2003, page 2 of...