HAT1069C Datasheet | Renesas

Features - Low on-resistance RDS(on) = 38 mΩ typ (at VGS = - 4.5 V) .. - High speed switching - Capable of 1.8 V gate drive - High density mounting Outline RENESAS Package code: PWSF0006JA-A (Package name: CMFPAK-6) Index band 6 5 2 3 4 5 D D D D 4 6 G 1. Source 2. Drain 3. Drain 4. Drain 5. Drain 6. Gate 2 1 S 1 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse)Note1 IDR Pch Note2 Tch Tstg Ratings - 12 ±8 - 4 - 16 - 4 900 150 - 55 to +150 Unit V V A A A m W °C °C Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. When using the grass epoxy board. (FR4 40 × 40 × 1.6 mm) REJ03G0164-0300 Rev.3.00 Oct 19, 2007 Page 1 of 5 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance .. Output capacitance Reverse transfer capacitance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body- drain diode forward voltage Notes: 3. Pulse test Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) RDS(on) RDS(on) |yfs| Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDF Min - 12 ±8 - - - 0.3 - - - 5 - - - - - - - - - - - Typ - - - - - 38 48 60 8 1380 235 115 16 3 6.2 35 150 490 350 - 0.8...