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HAT1069C
Silicon P Channel Power MOS FET Power Switching
REJ03G0164-0300 Rev.3.00 Oct 19, 2007
Features
• Low on-resistance RDS(on) = 38 mΩ typ (at VGS = –4.5 V) www.DataSheet4U.com • High speed switching • Capable of 1.8 V gate drive • High density mounting
Outline
RENESAS Package code: PWSF0006JA-A (Package name: CMFPAK-6)
Index band 6 5 2 3 4 5 D D D D 4 6 G 1. Source 2. Drain 3. Drain 4. Drain 5. Drain 6. Gate
2 1
3
S 1
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse)Note1 IDR PchNote2 Tch Tstg Ratings –12 ±8 –4 –16 –4 900 150 –55 to +150 Unit V V A A A mW °C °C
Notes: 1.
HAT1069C Datasheet
