Datasheet Summary
Silicon P Channel Power MOS FET Power Switching
Features
- Capable of
- 4.5 V gate drive
- Low drive current
- High density mounting
- Low on-resistance
RDS (on) = 3.6 mΩ typ (at VGS =
- 10 V)
Outline
RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK)
5 4 G
1 234
REJ03G1155-0700 (Previous: ADE-208-1534E)
Rev.7.00 Sep 07, 2005
5 D
SSS 123
1, 2, 3 4 5
Source Gate Drain
Rev.7.00 Sep 07, 2005 page 1 of...