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HAT1089C
Silicon P Channel MOS FET Power Switching
REJ03G1227-0300 Rev.3.00 Jun. 13, 2005
Features
• Low on-resistance RDS(on) = 79 mΩ typ. (at VGS = –4.5 V) www.DataSheet4U.com • Low drive current. • 2.5 V gate drive devices. • High density mounting
Outline
RENESAS Package code: PWSF0006JA-A (Package name: CMFPAK-6) Indexband 6 5 4 6 G 2 3 4 5 DDD D
1. Source 2. Drain 3. Drain 4. Drain 5. Drain 6. Gate
1
2
3
S 1
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to Source voltage Gate to Source voltage Drain current Drain peak current Body - Drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. When using the glass epoxy board. (FR4 40 × 40 × 1.
HAT1089C Datasheet
