HAT1110R
HAT1110R is Silicon P-Channel Power MOSFET manufactured by Renesas.
Features
- Capable of
- 4.5 V gate drive
- Low drive current
- High density mounting
Outline
SOP-8
S1
MOS1
S3
MOS2
8 7 65 1 234
REJ03G0416-0200 Rev.2.00
Oct.07.2004
1, 3
Source
2, 4
Gate
5, 6, 7, 8 Drain
Absolute Maximum Ratings
Item
Symbol
Ratings
Drain to source voltage
VDSS
- 80
Gate to source voltage
VGSS
±20
Drain current Drain peak current
- 1
ID(pulse)Note1
- 6
Reverse drain current Channel dissipation Channel dissipation
-...
