HAT2070R - Silicon N-Channel Power MOSFET

Renesas

Key Features

Capable of 4.5 V gate drive.
Low drive current.
High density mounting.
Low on-resistance RDS (on) = 11 mΩ typ (at VGS = 10 V) Outline.

HAT2070R silicon n-channel power mosfet by Renesas - Datasheet Preview

Datasheet Details

Part number	HAT2070R
Manufacturer	Renesas
File Size	80.24 KB
Description	Silicon N-Channel Power MOSFET
Datasheet	HAT2070R Datasheet

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HAT2070R Silicon N Channel Power MOS FET Power Switching Features • Capable of 4.5 V gate drive • Low drive current • High density mounting • Low on-resistance RDS (on) = 11 mΩ typ (at VGS = 10 V) Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8 ) 87 65 4 G 1234 REJ03G1177-0400 (Previous: ADE-208-1226B) Rev.4.00 Sep 07, 2005 5678 DDDD SSS 123 1, 2, 3 4 5, 6, 7, 8 Source Gate Drain Rev.4.00 Sep 07, 2005 page 1 of 6 HAT2070R Absolute Maximum Ratings Item Symbol Value Drain to source voltage Gate to source voltage VDSS 30 VGSS ±20 Drain current Drain peak current ID 12 ID (pulse) Note 1 96 Body-drain diode reverse drain current IDR 12 Channel dissipation Pch Note 2 2.