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HAT2071R - Silicon N-Channel Power MOSFET

Key Features

  • Capable of 4.5 V gate drive.
  • Low drive current.
  • High density mounting.
  • Low on-resistance RDS (on) = 16 mΩ typ (at VGS = 10 V) Outline.

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Datasheet Details

Part number HAT2071R
Manufacturer Renesas
File Size 80.27 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet HAT2071R Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HAT2071R Silicon N Channel Power MOS FET Power Switching Features • Capable of 4.5 V gate drive • Low drive current • High density mounting • Low on-resistance RDS (on) = 16 mΩ typ (at VGS = 10 V) Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8 ) 87 65 4 G 1234 REJ03G1178-0400 (Previous: ADE-208-1227B) Rev.4.00 Sep 07, 2005 5678 DDDD SSS 123 1, 2, 3 4 5, 6, 7, 8 Source Gate Drain Rev.4.00 Sep 07, 2005 page 1 of 6 HAT2071R Absolute Maximum Ratings Item Symbol Value Drain to source voltage Gate to source voltage VDSS 30 VGSS ±20 Drain current Drain peak current ID 10 ID (pulse) Note 1 80 Body-drain diode reverse drain current IDR 10 Channel dissipation Pch Note 2 2.