HAT2085T
HAT2085T is Silicon N-Channel Power MOSFET manufactured by Renesas.
Features
- Low on-resistance
- Low drive current
- High density mounting
Outline
RENESAS Package code: PTSP0008JB-B (Package name: TSSOP-8 <TTP-8DV> )
8765 4G
5 6 78 D D DD
SSS 123
REJ03G0163-0500 Rev.5.00
Nov 27, 2007
1, 2, 3 4 5, 6, 7, 8
Source Gate Drain
Absolute Maximum Ratings
Item
Symbol
Value
Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation
VDSS VGSS
ID ID (pulse) Note 1
IDR Pch Note 2
200 ±30 1.4 11.2 1.4 1.3
Channel temperature
Tch
Storage temperature
Tstg
- 55 to +150
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 10 s
(Ta = 25°C)
Unit V V A A A W °C °C
REJ03G0163-0500 Rev.5.00 Nov 27, 2007 Page 1 of 6
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min Typ Max Unit
Test Conditions
Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer...