The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
HAT2087R
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance • Low drive current • High density mounting
Outline
RENESAS Package code: PRSP0008DD-D (Package name: SOP-8 )
87 65 1234
4 G
5678 DDDD
SSS 123
REJ03G1182-0300 Rev.3.00
Feb 06, 2009
1, 2, 3 4 5, 6, 7, 8
Source Gate Drain
Absolute Maximum Ratings
Item
Symbol
Value
Drain to source voltage
VDSS
250
Gate to source voltage
VGSS
±30
Drain current Drain peak current
ID ID (pulse) Note 1
2.5 20
Body to drain diode reverse drain current Channel dissipation
IDR Pch Note 2
2.5 2.5
Channel temperature
Tch 150
Storage temperature
Tstg –55 to +150
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. When using the glass epoxy board (FR4 40 × 40 × 1.
HAT2087R Datasheet
