HAT2170H Datasheet | Renesas

Features - High speed switching - Capable of 7 V gate drive - Low drive current - High density mounting - Low on-resistance RDS(on) = 3.3 mΩ typ. (at VGS = 10 V) Outline RENESAS Package code: PTZZ0005DA-A) (Package name: LFPAK ) 1 234 4 G Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to Case Thermal Resistance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tch = 25°C, Rg ≥ 50 Ω 3. Tc = 25°C Symbol VDSS VGSS ID ID(pulse)Note1 IDR IAPNote2 EARNote2 Pch Note3 θch-C Tch Tstg REJ03G0121-0500 Rev.5.00 Sep 26, 2005 5 D SSS 123 1, 2, 3 Source Gate Drain Ratings 40 ±20 45 180 45 30 72 30 4.17 150 - 55 to +150 (Ta = 25°C) Unit V V A A A A m J W °C/W °C °C Rev.5.00, Sep 26, 2005, page 1 of 7 Electrical Characteristics Item Symbol Min Drain to source breakdown voltage...