Datasheet Summary
Silicon N Channel Power MOS FET Power Switching
Features
- High speed switching
- Capable of 8 V gate drive
- Low drive current
- High density mounting
- Low on-resistance
RDS(on) = 12 mΩ typ. (at VGS = 10 V)
Outline
RENESAS Package code: PTZZ0005DA-A) (Package name: LFPAK )
1 234
5 D
4 G
SSS 123
REJ03G0030-0200 Rev.2.00
Sep 26, 2005
1, 2, 3 Source
Gate
Drain...