Click to expand full text
HAT2179R
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance • Low drive current • High density mounting
Outline
RENESAS Package code: PRSP0008DD-D (Package name: SOP-8)
8765
1234
4 G
5678 DDDD
SSS 123
REJ03G1570-0200 Rev.2.00
Jul 17, 2009
1, 2, 3 Source
4
Gate
5, 6, 7, 8 Drain
Absolute Maximum Ratings
Item
Symbol
Ratings
Drain to source voltage Gate to source voltage
VDSS
600
VGSS
±30
Drain current Drain peak current
ID
0.7
ID
Note1 (pulse)
2.0
Body-drain diode reverse drain current
IDR
0.7
Body-drain diode reverse drain peak current
IDR
Note1 (pulse)
2.0
Channel dissipation
Pch Note2
2.5
Channel temperature
Tch
150
Storage temperature
Tstg
–55 to +150
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2.
HAT2179R Datasheet
