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HAT2179R Datasheet

Silicon N Channel MOS FET High Speed Power Switching

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HAT2179R
Silicon N Channel MOS FET
High Speed Power Switching
Features
Low on-resistance
Low drive current
High density mounting
Outline
RENESAS Package code: PRSP0008DD-D
(Package name: SOP-8<FP-8DAV>)
8765
1234
4
G
5678
DDDD
SSS
123
REJ03G1570-0100
Rev.1.00
Jul 06, 2007
1, 2, 3 Source
4 Gate
5, 6, 7, 8 Drain
Absolute Maximum Ratings
Item
Symbol
Ratings
Drain to source voltage
Gate to source voltage
VDSS
VGSS
600
±30
Drain current
Drain peak current
ID
ID
Note1
(pulse)
0.7
2.0
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Channel dissipation
IDR
IDR
Note1
(pulse)
Pch Note2
0.7
2.0
2.5
Channel temperature
Tch 150
Storage temperature
Tstg –55 to +150
Notes: 1. PW 10 µs, duty cycle 1%
2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10 s
(Ta = 25°C)
Unit
V
V
A
A
A
A
W
°C
°C
REJ03G1570-0100 Rev.1.00 Jul 06, 2007
Page 1 of 3


Renesas Electronics Components Datasheet

HAT2179R Datasheet

Silicon N Channel MOS FET High Speed Power Switching

No Preview Available !

HAT2179R
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min Typ Max Unit
Test conditions
Drain to source breakdown voltage
V(BR)DSS
600
V ID = 10 mA, VGS = 0
Zero gate voltage drain current
IDSS — — 1 µA VDS = 600 V, VGS = 0
Gate to source leak current
IGSS — — ±0.1 µA VGS = ±30 V, VDS = 0
Gate to source cutoff voltage
Forward transfer admittance
Static drain to source on state
VGS(off)
3.0
5.0
|yfs| 0.8 1.2 —
RDS(on)
3.5
4.5
V VDS = 10 V, ID = 1 mA
S ID = 0.4 A, VDS = 10 V Note3
ID = 0.4 A, VGS = 10 V Note3
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Ciss — 280 —
Coss
31
Crss — 3.8 —
pF VDS = 25 V
pF VGS = 0
pF f = 1 MHz
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate to source charge
Gate to drain charge
Body-drain diode forward voltage
Body-drain diode reverse
recovery time
Notes: 3. Pulse test
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDF
trr
— 24 —
— 15 —
— 50 —
— 58 —
— 10 —
— 1.6 —
— 5.4 —
— 0.8 1.2
— 200 —
ns ID = 0.4 A
ns VGS = 10 V
ns RL = 750
ns Rg = 10
nC VDD = 480 V
nC VGS = 10 V
nC ID = 0.7 A
V IF = 0.7 A, VGS = 0 Note3
ns IF = 0.7 A, VGS = 0
diF/dt = 100 A/µs
REJ03G1570-0100 Rev.1.00 Jul 06, 2007
Page 2 of 3


Part Number HAT2179R
Description Silicon N Channel MOS FET High Speed Power Switching
Maker Renesas Technology
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