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HAT2197R - Silicon N-Channel Power MOSFET

Key Features

  • High speed switching.
  • Capable of 4.5 V gate drive.
  • Low drive current.
  • High density mounting.
  • Low on-resistance RDS(on) = 5.3 mΩ typ. (at VGS = 10 V) Outline SOP-8 8 7 65 56 7 8 DD D D 1 234 REJ03G0061-0201Z Rev.2.01 Nov.30.2016 4 G SSS 12 3 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain Rev.2.01, Nov.30.2016, page 1 of 7 HAT2197R Absolute Maximum Ratings Item Symbol Ratings Drain to source voltage VDSS Gate to source voltage VGSS Drain c.

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Datasheet Details

Part number HAT2197R
Manufacturer Renesas
File Size 215.21 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet HAT2197R Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HAT2197R Silicon N Channel Power MOS FET Power Switching Features • High speed switching • Capable of 4.5 V gate drive • Low drive current • High density mounting • Low on-resistance RDS(on) = 5.3 mΩ typ. (at VGS = 10 V) Outline SOP-8 8 7 65 56 7 8 DD D D 1 234 REJ03G0061-0201Z Rev.2.01 Nov.30.2016 4 G SSS 12 3 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain Rev.2.01, Nov.30.2016, page 1 of 7 HAT2197R Absolute Maximum Ratings Item Symbol Ratings Drain to source voltage VDSS Gate to source voltage VGSS Drain current Drain peak current ID ID(pulse)Note1 Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation IDR IAP Note 2 EAR Note 2 Pch Note3 Channel to ambient thermal impedance θch-a Note3 30 ±20 16 128 16 16 25.6 2.