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HAT2201R
Silicon N Channel Power MOS FET Power Switching
Features
• Capable of 8 V gate drive • Low drive current • High density mounting • Low on-resistance
RDS(on) = 34 mΩ typ. (at VGS = 10 V)
Outline
SOP-8
8 7 65
56 7 8 DD D D
1 234
4 G
SSS 12 3
1, 2, 3 Source
4
Gate
5, 6, 7, 8 Drain
REJ03G0233-0301Z Rev.3.01
Nov.30.2016
Rev.3.01, Nov.30.2016, page 1 of 7
HAT2201R
Absolute Maximum Ratings
Item
Symbol
Ratings
Drain to source voltage
VDSS
100
Gate to source voltage
VGSS
±20
Drain current Drain peak current
ID
6
ID(pulse)Note1
48
Body-drain diode reverse drain current
IDR
6
Avalanche current
IAP Note 2
6
Avalanche energy
EAR Note 2
3.6
Channel dissipation
Pch Note3
2.
HAT2201R Datasheet
