Datasheet Summary
Silicon N Channel Power MOS FET Power Switching
Features
- Capable of 8 V gate drive
- Low drive current
- High density mounting
- Low on-resistance
RDS(on) = 34 mΩ typ. (at VGS = 10 V)
Outline
SOP-8
8 7 65
56 7 8 DD D D
1 234
4 G
SSS 12 3
1, 2, 3 Source
Gate
5, 6, 7, 8 Drain
REJ03G0233-0301Z Rev.3.01
Nov.30.2016
Rev.3.01, Nov.30.2016, page 1 of...
