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Renesas Electronics Components Datasheet

HAT2201R Datasheet

Silicon N Channel Power MOS FET Power Switching

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HAT2201R
Silicon N Channel Power MOS FET
Power Switching
Features
Capable of 8 V gate drive
Low drive current
High density mounting
Low on-resistance
RDS(on) = 34 mtyp. (at VGS = 10 V)
Outline
SOP-8
8 7 65
56 7 8
DD D D
1 234
4
G
SSS
12 3
1, 2, 3 Source
4 Gate
5, 6, 7, 8 Drain
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REJ03G0233-0300Z
Rev.3.00
Apr.07.2004
Rev.3.00, Apr.07.2004, page 1 of 7


Renesas Electronics Components Datasheet

HAT2201R Datasheet

Silicon N Channel Power MOS FET Power Switching

No Preview Available !

HAT2201R
Absolute Maximum Ratings
Item
Symbol
Ratings
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to Ambient Thermal Impedance
VDSS
VGSS
ID
ID(pulse)Note1
IDR
IAP Note 2
EAR Note 2
Pch Note3
θch-a Note3
100
±20
6
48
6
6
3.6
2.5
50
Channel temperature
Tch 150
Storage temperature
Tstg –55 to +150
Notes: 1. PW 10 µs, duty cycle 1%
2. Value at Tch = 25°C, Rg 50
3. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10s
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Unit
V
V
A
A
A
A
mJ
W
°C/W
°C
°C
(Ta = 25°C)
Electrical Characteristics
Item
Symbol
Drain to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
V(BR)DSS
IGSS
IDSS
VGS(off)
RDS(on)
RDS(on)
|yfs|
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Gate Resistance
Rg
Total gate charge
Qg
Gate to source charge
Qgs
Gate to drain charge
Qgd
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Body–drain diode forward voltage
VDF
Body–drain diode reverse recovery time trr
Min
100
3.5
6
Notes: 4. Pulse test
Typ
34
35
10
1450
180
65
0.9
21
7.6
5.2
18
2.5
36
4.0
0.79
40
Max
± 0.1
1
5.0
43
49
1.03
Unit
V
µA
µA
V
m
m
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
ns
(Ta = 25°C)
Test Conditions
ID = 10 mA, VGS = 0
VGS = ±20 V, VDS = 0
VDS = 100 V, VGS = 0
VDS = 10 V, I D = 1 mA
ID = 3 A, VGS = 10 V Note4
ID = 3 A, VGS = 8 V Note4
ID = 3 A, VDS = 10 V Note4
VDS = 10 V
VGS = 0
f = 1 MHz
VDD = 50 V
VGS = 10 V
ID = 6 A
VGS = 10 V, ID = 3 A
VDD 30 V
RL = 10
Rg = 4.7
IF = 6 A, VGS = 0 Note4
IF = 6 A, VGS = 0
diF/ dt = 100 A/ µs
Rev.3.00, Apr.07.2004, page 2 of 7


Part Number HAT2201R
Description Silicon N Channel Power MOS FET Power Switching
Maker Renesas Technology
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HAT2201R Datasheet PDF






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