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HAT2207C
Silicon N Channel MOS FET Power Switching
Features
• Low on-resistance RDS(on) = 100 mΩ typ. (at VGS = 4.5 V)
• Low drive current. • High density mounting • 2.5 V gate drive devices.
Outline
RENESAS Package code: PWSF0006JA-A (Package name: CMFPAK-6)
Indexband 6
5
4
3 2 1
REJ03G1239-0600 Rev.6.00
Feb 28, 2006
23 45 DD DD
6 G
S 1
1. Source 2. Drain 3. Drain 4. Drain 5. Drain 6. Gate
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
VDSS
Gate to source voltage
VGSS
Drain current Drain peak current
ID ID (pulse)Note1
Body - Drain diode reverse drain current Channel dissipation
IDR PchNote 2
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. When using the glass epoxy board. (FR4 40 ʷ 40 ʷ 1.
HAT2207C Datasheet
