HAT2207C Description
HAT2207C Silicon N Channel MOS FET Power Switching.
HAT2207C Key Features
- Low on-resistance RDS(on) = 100 mΩ typ. (at VGS = 4.5 V)
- Low drive current
- High density mounting
- 2.5 V gate drive devices
HAT2207C is Silicon N-Channel Power MOSFET manufactured by Renesas .
HAT2207C Silicon N Channel MOS FET Power Switching.