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Renesas Electronics Components Datasheet

HAT2210RJ Datasheet

Silicon N Channel Power MOS FET

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HAT2210R, HAT2210RJ
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Silicon N Channel Power MOS FET with Schottky Barrier Diode
High Speed Power Switching
REJ03G0578-0300
Rev.3.00
Mar.15.2005
Features
Low on-resistance
Capable of 4.5 V gate drive
High density mounting
Built-in Schottky Barrier Diode
Outline
RENESAS Package code: PRSP0008DD-A
(Package name: SOP-8<FP-8DA>)
78
DD
56
DD
24
GG
8 7 65
1 234
S
1
MOS1
S
3
MOS2 and
Schottky Barrier Diode
1, 3
2, 4
5, 6, 7, 8
Source
Gate
Drain
Absolute Maximum Ratings
Ratings
Item
Symbol
HAT2210R
HAT2210RJ
MOS1 MOS2 & SBD MOS1 MOS2 & SBD
Drain to source voltage
VDSS
30
30
30
30
Gate to source voltage
VGSS
±20
±12
±20
±12
Drain current
ID 7.5 8.0 7.5 8.0
Drain peak current
ID(pulse)Note1
60
64
60
64
Reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
IDR
IAP Note 2
EAR Note 2
Pch Note3
7.5
1.5
8.0 7.5 8.0
— 7.5 8.0
— 5.62 6.4
1.5 1.5 1.5
Channel temperature
Tch 150 150 150 150
Storage temperature
Tstg –55 to +150 –55 to +150 –55 to +150 –55 to +150
Notes: 1. PW 10 µs, duty cycle 1 %
2. Value at Tch = 25°C, Rg 50
3. 1 Drive operation; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10 s
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
°C
°C
Rev.3.00, Mar.15.2005, page 1 of 11


Renesas Electronics Components Datasheet

HAT2210RJ Datasheet

Silicon N Channel Power MOS FET

No Preview Available !

HAT2210R, HAT2210RJ
Electrical Characteristics
• MOS1
Item
Drain to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Zero gate voltage
drain current
HAT2210R
HAT2210RJ
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse
recovery time
Notes: 4. Pulse test
Symbol
V(BR)DSS
IGSS
IDSS
IDSS
IDSS
VGS(off)
RDS(on)
RDS(on)
|yfs|
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDF
trr
Min
30
1.0
9
Typ
19
27
15
630
155
57
4.6
2.2
1.2
7
14
36
3.4
0.85
17
Max
±0.1
1
10
2.5
24
40
1.11
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Unit
V
µA
µA
µA
µA
V
m
m
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
ns
(Ta = 25°C)
Test Conditions
ID = 10 mA, VGS = 0
VGS = ±20 V, VDS = 0
VDS = 30 V, VGS = 0
VDS = 24 V, VGS = 0,
Ta = 125°C
VDS = 10 V, ID = 1 mA
ID = 3.75 A, VGS = 10 V Note4
ID = 3.75 A, VGS = 4.5 V Note4
ID = 3.75 A, VDS = 10 V Note4
VDS = 10 V, VGS = 0,
f = 1MHz
VDD = 10 V, VGS = 4.5 V,
ID = 7.5 A
VGS =10 V, ID = 3.75 A,
VDD 10 V, RL = 2.66 Ω,
Rg = 4.7
IF = 7.5 A, VGS = 0 Note4
IF =7.5 A, VGS = 0
diF/ dt = 100 A/µs
Rev.3.00, Mar.15.2005, page 2 of 11


Part Number HAT2210RJ
Description Silicon N Channel Power MOS FET
Maker Renesas Technology
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HAT2210RJ Datasheet PDF






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