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Renesas Electronics Components Datasheet

HAT2226R Datasheet

Silicon N Channel MOS FET High Speed Power Switching

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HAT2226R
Silicon N Channel MOS FET
High Speed Power Switching
Features
Low on-resistance
Low drive current
High density mounting
Outline
RENESAS Package code: PRSP0008DD-D
(Package name: SOP-8<FP-8DAV>)
8765
1234
4
G
5678
DDDD
SSS
123
www.DataSheet4U.com
REJ03G1466-0100
Rev.1.00
Jul 18, 2006
1, 2, 3 Source
4 Gate
5, 6, 7, 8 Drain
Absolute Maximum Ratings
Item
Symbol
Ratings
Drain to source voltage
Gate to source voltage
VDSS
VGSS
600
±30
Drain current
Drain peak current
ID
ID
Note1
(pulse)
0.1
0.4
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Channel dissipation
IDR
IDR
Note1
(pulse)
Pch Note2
0.1
0.4
1.5
Channel temperature
Tch 150
Storage temperature
Tstg –55 to +150
Notes: 1. PW 10 µs, duty cycle 1%
2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10 s
(Ta = 25°C)
Unit
V
V
A
A
A
A
W
°C
°C
Rev.1.00 Jul 18, 2006 page 1 of 3


Renesas Electronics Components Datasheet

HAT2226R Datasheet

Silicon N Channel MOS FET High Speed Power Switching

No Preview Available !

HAT2226R
Electrical Characteristics
Item
Drain to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Static drain to source on state
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate to source charge
Gate to drain charge
Body-drain diode forward voltage
Body-drain diode reverse
recovery time
Notes: 3. Pulse test
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
RDS(on)
Min
600
3.0
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDF
trr
Typ
35
25
4
0.4
34
16
57
320
3.1
0.5
2.3
0.79
175
Max
1
±0.1
5.0
52
1.35
Unit
V
µA
µA
V
www.DataSheet4U.com
(Ta = 25°C)
Test conditions
ID = 10 mA, VGS = 0
VDS = 600 V, VGS = 0
VGS = ±30 V, VDS = 0
VDS = 10 V, ID = 1 mA
ID = 50 mA, VGS = 10 V Note3
pF VDS = 25 V
pF VGS = 0
pF f = 1 MHz
ns ID = 50 mA
ns VGS = 10 V
ns RL = 6000
ns Rg = 10
nC VDD = 480 V
nC VGS = 10 V
nC ID = 100 mA
V IF = 100 mA, VGS = 0 Note3
ns IF = 100 mA, VGS = 0
diF/dt = 100 A/µs
Rev.1.00 Jul 18, 2006 page 2 of 3


Part Number HAT2226R
Description Silicon N Channel MOS FET High Speed Power Switching
Maker Renesas Technology
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