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HAT2226R - Silicon N-Channel Power MOSFET

Features

  • Low on-resistance.
  • Low drive current.
  • High density mounting Outline.

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Full PDF Text Transcription

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HAT2226R Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance • Low drive current • High density mounting Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8) 8765 1234 4 G 5678 DDDD SSS 123 REJ03G1466-0100 Rev.1.00 Jul 18, 2006 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain Absolute Maximum Ratings Item Symbol Ratings Drain to source voltage Gate to source voltage VDSS 600 VGSS ±30 Drain current Drain peak current ID 0.1 ID Note1 (pulse) 0.4 Body-drain diode reverse drain current IDR 0.1 Body-drain diode reverse drain peak current IDR Note1 (pulse) 0.4 Channel dissipation Pch Note2 1.5 Channel temperature Tch 150 Storage temperature Tstg –55 to +150 Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2.
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