900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




Renesas Electronics Components Datasheet

HAT2265H Datasheet

Silicon N Channel Power MOS FET Power Switching

No Preview Available !

www.DataSheet4U.com
HAT2265H
Silicon N Channel Power MOS FET Power Switching
Features
High speed switching
Capable of 4.5 V gate drive
Low drive current
High density mounting
Low on-resistance
RDS(on) = 2.5 mtyp. (at VGS = 10 V)
Lead Free
Rev.0.00
Sept.2004
Outline
LFPAK
5
D
4
G
SSS
12 3
5
1 234
1, 2, 3 Source
4 Gate
5 Drain
Rev.0.00, Sept.2004, page 1 of 5


Renesas Electronics Components Datasheet

HAT2265H Datasheet

Silicon N Channel Power MOS FET Power Switching

No Preview Available !

HAT2265H
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
VDSS
VGSS
ID
ID(pulse)Note1
IDR
IAP Note 2
EAR Note 2
Pch Note3
Channel to Case Thermal Resistance θch-C
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW 10 µs, duty cycle 1%
2. Value at Tch = 25°C, Rg 50
3. Tc = 25°C
www.DataSheet4U.com
Ratings
30
±20
55
220
55
30
90
30
4.17
150
–55 to +150
Unit
V
V
A
A
A
A
mJ
W
°C/W
°C
°C
Rev.0.00, Sept.2004, page 2 of 5


Part Number HAT2265H
Description Silicon N Channel Power MOS FET Power Switching
Maker Renesas Technology
PDF Download

HAT2265H Datasheet PDF





Similar Datasheet

1 HAT2265H Silicon N Channel Power MOS FET Power Switching
Renesas Technology





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy