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HAT2279N - Silicon N-Channel Power MOSFET

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Renesas Technology

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HAT2279N Silicon N-Channel Power MOSFET by Renesas Technology - Datasheet Preview — Datasheet preview – HAT2279N

Datasheet Details

Part number	HAT2279N
Manufacturer	Renesas Technology
File Size	127.95 KB
Description	Silicon N-Channel Power MOSFET
Datasheet	HAT2279N Datasheet
Additional preview pages of the HAT2279N datasheet.

Product details

Features

High speed switching.
Capable of 4.5 V gate drive.
Low drive current.
High density mounting.
Low on-resistance RDS(on) = 9.8 mΩ typ. (at VGS = 10 V).
Lead Free Outline LFPAK-i 5 6 7 8 D D D D 1(S) 2(S) 3(S) 4(G) 4 G 8(D) 7(D) 6(D) 5(D) 2X XX 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S S S 1 2 3 Rev.2.00, Jul.05.2005, page 1 of 4 www. DataSheet4U. com HAT2279N Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to sour.

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Published: Apr 13, 2010 |