Datasheet4U Logo Datasheet4U.com

HAT2279N - Silicon N-Channel Power MOSFET

Features

  • High speed switching
  • Capable of 4.5 V gate drive
  • Low drive current
  • High density mounting
  • Low on-resistance RDS(on) = 9.8 mΩ typ. (at VGS = 10 V)
  • Lead Free Outline LFPAK-i 5 6 7 8 D D D D 1(S) 2(S) 3(S) 4(G) 4 G 8(D) 7(D) 6(D) 5(D) 2X XX

📥 Download Datasheet

Preview of HAT2279N PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • HAT2201RJ - N-Channel 100V MOSFET (VBsemi)
  • HAT200-S - (HAT200-S - HAT1500-S) Current Transducer (LEM)
  • HAT2016R - Silicon N-Channel Power MOSFET (Hitachi Semiconductor)
  • HAT2019R - Silicon N-Channel Power MOSFET (Hitachi Semiconductor)
  • HAT2020R - Silicon N-Channel Power MOSFET (Hitachi Semiconductor)
  • HAT2022R - Silicon N-Channel Power MOSFET (Hitachi Semiconductor)
  • HAT2024R - Silicon N-Channel Power MOSFET (Hitachi Semiconductor)
  • HAT2024RJ - Dual N-Channel MOSFET (VBsemi)

📌 All Tags

Silicon N-Channel Power MOSFET Renesas Technology
Renesas Technology HAT2279N-like datasheet

HAT2279N Stock/Price