HAT2279N Overview
HAT2279N Silicon N Channel Power MOS FET Power Switching Preliminary Rev.2.00 Jul.05.2005.
HAT2279N Key Features
- High speed switching
- Capable of 4.5 V gate drive
- Low drive current
- High density mounting
- Low on-resistance RDS(on) = 9.8 mΩ typ. (at VGS = 10 V)
- Lead Free