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Renesas Electronics Components Datasheet

HIT468 Datasheet

Silicon NPN Epitaxial

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HIT468 pdf
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HIT468
Silicon NPN Epitaxial
Features
Low frequency power amplifier
Complementary pair with HIT562
Outline
RENESAS Package code: PRSS0003DC-A
(Package name: TO-92 Mod)
REJ03G1502-0200
Rev.2.00
Mar 05, 2007
1. Emitter
2. Collector
3. Base
Absolute Maximum Ratings
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
Note : 1. PW 10 ms, Duty cycle 20%
3
2
1
Symbol
VCBO
VCEO
VEBO
IC
IC (peak) *1
PC
Tj
Tstg
Ratings
45
25
6
1.0
1.5
0.8
150
–55 to +150
(Ta = 25°C)
Unit
V
V
V
A
A
W
°C
°C
Rev.2.00 Mar 05, 2007 page 1 of 4


Renesas Electronics Components Datasheet

HIT468 Datasheet

Silicon NPN Epitaxial

No Preview Available !

HIT468 pdf
HIT468
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min Typ Max Unit
Test conditions
Collector to base breakdown voltage
V(BR)CBO
45
V IC = 10 µA, IE = 0
Collector to emitter breakdown voltage
V(BR)CEO
25
V IC = 100 µA, RBE =
Emitter to base breakdown voltage
V(BR)EBO
6
——
V IE = 10 µA, IC = 0
Collector cutoff current
ICBO — — 500 nA VCB = 45 V, IE = 0
Emitter cutoff current
IEBO — — 500 nA VEB = 6 V, IC = 0
DC current transfer ratio
hFE1 45 — — — VCE = 1 V, IC = 5 mA
hFE2 85 — 330 — VCE = 1 V, IC = 100 mA
hFE3 40 — — — VCE = 1 V, IC = 800 mA
Collector to emitter saturation voltage
VCE(sat)
— 0.5
V IC = 800 mA, IB = 80 mA
Base to emitter voltage
VBE — — 1.0 V VCE = 1 V, IC = 10 mA
Base to emitter saturation voltage
VBE(sat)
— 1.2
V IC = 800 mA, IB = 80 mA
Rev.2.00 Mar 05, 2007 page 2 of 4


Part Number HIT468
Description Silicon NPN Epitaxial
Maker Renesas Technology
Total Page 5 Pages
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