• Part: HIT468
  • Description: Silicon NPN Epitaxial
  • Manufacturer: Renesas
  • Size: 144.07 KB
Download HIT468 Datasheet PDF
Renesas
HIT468
HIT468 is Silicon NPN Epitaxial manufactured by Renesas.
Features - Low frequency power amplifier - plementary pair with HIT562 Outline RENESAS Package code: PRSS0003DC-A (Package name: TO-92 Mod) 1. Emitter 2. Collector 3. Base 3 2 1 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note : 1. PW ≤ 10 ms, Duty cycle ≤ 20% Symbol VCBO VCEO VEBO IC IC (peak) - 1 PC Tj Tstg Ratings 45 25 6 1.0 1.5 0.8 150 - 55 to +150 Unit V V V A A W °C °C Rev.2.00 Mar 05, 2007 page 1 of 4 Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO h FE1 h FE2 h FE3 VCE(sat) VBE VBE(sat) Min 45 25 6 - - 45 85 40 - - - Typ - - - - - - - - - - - Max - - - 500 500 - 330 - 0.5 1.0 1.2 Unit V V V n A n A - - - V V V Test conditions IC = 10 µA, IE = 0 IC = 100 µA, RBE = ∞ IE = 10 µA, IC = 0 VCB = 45 V, IE = 0 VEB = 6 V, IC = 0 VCE = 1 V, IC = 5 m A VCE = 1 V, IC = 100 m A VCE = 1 V, IC = 800 m A IC = 800 m A, IB = 80 m A VCE = 1 V, IC = 10 m A IC = 800 m A, IB = 80 m A Collector to emitter saturation voltage Base to emitter voltage Base to emitter saturation voltage Rev.2.00 Mar 05, 2007 page 2 of 4 Main Characteristics Maximum Collector Dissipation Curve Collector Power Dissipation Pc (W) 1.2 1000 Typical Output Characteristics 10 m A 9 m A 8 m A 7 m A A 5m 6 m A 4 m A 3 m A Collector Current IC (m...