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HM64YLB36514 - 16M Synchronous Late Write Fast Static RAM

Description

The HM64YLB36514 is a synchronous fast static RAM organized as 512-kword × 36-bit.

It has realized high speed access time by employing the most advanced CMOS process and high speed circuit designing technology.

Features

  • 2.5 V ± 5% operation and 1.5 V (VDDQ).
  • 16M bit density.
  • Internal self-timed late write.
  • Byte write control (4 byte write selects, one for each 9-bit).
  • Optional ×18 configuration.
  • HSTL compatible I/O.
  • Programmable impedance output drivers.
  • Differential pseudo-HSTL clock inputs.
  • Asynchronous G output control.
  • Asynchronous sleep mode.
  • FC-BGA 119pin package with SRAM JEDEC standard pinout.
  • Li.

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Datasheet Details

Part number HM64YLB36514
Manufacturer Renesas
File Size 219.39 KB
Description 16M Synchronous Late Write Fast Static RAM
Datasheet download datasheet HM64YLB36514 Datasheet

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Full PDF Text Transcription (Reference)

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www.DataSheet4U.com HM64YLB36514 Series 16M Synchronous Late Write Fast Static RAM (512-kword × 36-bit, Register-Latch Mode) REJ03C0039-0001Z Preliminary Rev.0.10 May.15.2003 Description The HM64YLB36514 is a synchronous fast static RAM organized as 512-kword × 36-bit. It has realized high speed access time by employing the most advanced CMOS process and high speed circuit designing technology. It is most appropriate for the application which requires high speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. It is packaged in standard 119bump BGA. Note: All power supply and ground pins must be connected for proper operation of the device. Features • 2.5 V ± 5% operation and 1.
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