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R1LV1616HSA-5SI - Wide Temperature Range Version 16M SRAM

This page provides the datasheet information for the R1LV1616HSA-5SI, a member of the R1LV1616H-I Wide Temperature Range Version 16M SRAM family.

Description

The R1LV1616HSA-I Series is 16-Mbit static RAM organized 1-Mword  16-bit / 2-Mword  8-bit with embedded ECC.

R1LV1616HSA-I Series has realized higher density, higher performance and low power consumption by employing CMOS process technology (6-transistor memory cell).

Features

  • Single 3.0 V supply: 2.7 V to 3.6 V.
  • Fast access time: 45/55 ns (max).
  • Power dissipation:  Active: 9 mW/MHz (typ)  Standby: 1.5 W (typ).
  • Completely static memory.  No clock or timing strobe required.
  • Equal access and cycle times.
  • Common data input and output.  Three state output.
  • Battery backup operation.  2 chip selection for battery backup.
  • Temperature range: 40 to +85C.
  • Byte function (x8 mode) available by BYTE# & A-1.
  • Embedded ECC (e.

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Datasheet preview – R1LV1616HSA-5SI

Datasheet Details

Part number R1LV1616HSA-5SI
Manufacturer Renesas Technology
File Size 395.49 KB
Description Wide Temperature Range Version 16M SRAM
Datasheet download datasheet R1LV1616HSA-5SI Datasheet
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R1LV1616HSA-I Series Wide Temperature Range Version 16 M SRAM (1-Mword  16-bit / 2-Mword  8-bit) REJ03C0195-0103 Rev. 1.03 Feb.20.2020 Description The R1LV1616HSA-I Series is 16-Mbit static RAM organized 1-Mword  16-bit / 2-Mword  8-bit with embedded ECC. R1LV1616HSA-I Series has realized higher density, higher performance and low power consumption by employing CMOS process technology (6-transistor memory cell). It offers low power standby power dissipation; therefore, it is suitable for battery backup systems. It is packaged in 48-pin plastic TSOPI for high density surface mounting. Features  Single 3.0 V supply: 2.7 V to 3.6 V  Fast access time: 45/55 ns (max)  Power dissipation:  Active: 9 mW/MHz (typ)  Standby: 1.5 W (typ)  Completely static memory.
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