R1LV1616RSD-5S Datasheet | Renesas

R1LV1616R Series 16Mb Advanced LPSRAM (1M wordx16bit / 2M wordx8bit) REJ03C0101-0400Z Rev.4.00 2007.09.12 Description The R1LV1616R Series is a family of low voltage 16-Mbit static RAMs organized as 1048576-words by 16-bit, fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies. The R1LV1616R Series is suitable for memory applications where a simple interfacing , battery operating and battery backup are the important design objectives. The R1LV1616R Series is packaged in a 52pin micro thin small outline mount device[µTSOP / 10.79mm x 10.49mm with the pin-pitch of 0.4mm], a 48pin thin small outline mount device[TSOP / 12mm x 20mm with the pinpitch of 0.5mm] or a 48balls fine pitch ball grid array [f-BGA / 7.5mmx8.5mm with the ball-pitch of 0.75mm and 6x8 array] . It gives the best solution for a paction of mounting area as well as flexibility of wiring pattern of printed circuit boards. Features - Single 2.7-3.6V power supply - Small stand-by current:2µA (3.0V, typ.) - Data retention supply voltage =2.0V - No clocks, No refresh - All inputs and outputs are TTL patible - Easy memory expansion by CS1#, CS2, LB# and UB# - mon Data I/O - Three-state outputs: OR-tie capability - OE# prevents data contention on the I/O bus - Process technology: 0.15um CMOS .. REJ03C0101-0400Z Rev.4.00 2007.09.12 page 1 of 15 R1LV1616R Series Ordering Information Type No. R1LV1616RSD-5S% R1LV1616RSD-7S% R1LV1616RSD-8S% R1LV1616RBG-5S% R1LV1616RBG-7S% R1LV1616RBG-8S% R1LV1616RSA-5S% R1LV1616RSA-7S% R1LV1616RSA-8S% Access time 55 ns (Note0) 70 ns 85 ns 55 ns (Note0) 70 ns 85 ns 55 ns (Note0) 70 ns 85 ns Package 350-mil 52-pin plastic µ - TSOP(II) (normal-bend type) (52PTG) 7.5mmx8.5mm f-BGA 0.75mm pitch 48ball 12mm x 20mm plastic TSOP(I) (normal-bend type) (48P3R) Note0. 55ns parts can be supported under the condition of the input timing limitation toward SRAM on customer’s system. Please contact our sales office in your region, in...