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R1LV1616RSD-8SI - 16Mb superSRAM

Download the R1LV1616RSD-8SI datasheet PDF (R1LV1616RSD-7SI included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for 16mb supersram.

Description

The R1LV1616R Series is a family of low voltage 16-Mbit static RAMs organized as 1048576-words by 16-bit, fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies.

Features

  • Single 2.7-3.6V power supply.
  • Small stand-by current:4µA (3.0V, typ. ).
  • Smaller stand-by current by "Data retention mode"(“CS2"='L') : 1µA (3.0V, typ. ).
  • Data retention supply voltage =2.0V.
  • No clocks, No refresh.
  • All inputs and outputs are TTL compatible.
  • Easy memory expansion by CS1#, CS2, LB# and UB#.
  • Common Data I/O.
  • Three-state outputs: OR-tie capability.
  • OE# prevents data contention on the I/O bus.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (R1LV1616RSD-7SI-RenesasTechnology.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription

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Preliminary R1LV1616R Series 16Mb superSRAM (1M wordx16bit) This product is under development and its specification might be changed without any notice. REJ03C0101-0002Z Rev.0.02 2003.10.24 Description The R1LV1616R Series is a family of low voltage 16-Mbit static RAMs organized as 1048576-words by 16-bit, fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies. The R1LV1616R Series is suitable for memory applications where a simple interfacing , battery operating and battery backup are the important design objectives. The R1LV1616R Series is packaged in a 52pin micro thin small outline mount device[µTSOP / 10.79mm x 10.49mm with the pin-pitch of 0.4mm] or a 48balls fine pitch ball grid array [f-BGA / 7.5mmx8.5mm with the ball-pitch of 0.75mm and 6x8 array] .
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