R2J25953 - H-Bridge Control High Speed Power Switching

Renesas Technology

Datasheet Details

The R2J25953 multi-chip module incorporates high-side Pch MOS FET, low-side Nch MOS FET, and Bi-CMOS driver in a single HSOP-36 package..

For Automotive application.
Built-in low on state resistance MOS FET. (Pch: 16 m Max. , Nch: 11 m Max. ).
Pch MOS FET is adopted on the high-side, and the charge pump noise was lost.
Built-in protection circuit of Thermal shut-down (TSD), Low Voltage Inhit (LVI), Overvoltage Detection (OVD) and Overcurrent Detection.
Built-in diagnostic function.
Built-in cross-conduction protection.
Small Surface mounting package: HSOP-36 Block Diagram Reverce battery pr.

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