R2J25953 switching equivalent, h-bridge control high speed power switching.
* For Automotive application
* Built-in low on state resistance MOS FET. (Pch: 16 m Max., Nch: 11 m Max.)
* Pch MOS FET is adopted on the high-side, and the.
The R2J25953 multi-chip module incorporates high-side Pch MOS FET, low-side Nch MOS FET, and Bi-CMOS driver in a single HSOP-36 package. R07DS0044EJ0300 Rev.3.00 Sep 01, 2010
Features
* For Automotive application
* Built-in low on state resi.
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