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Renesas Electronics Components Datasheet

R2J25953 Datasheet

H-Bridge Control High Speed Power Switching

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Preliminary Datasheet
R2J25953
H-Bridge Control High Speed Power Switching
with Built-in Driver IC and Power MOS FET
R07DS0044EJ0300
Rev.3.00
Sep 01, 2010
Description
The R2J25953 multi-chip module incorporates high-side Pch MOS FET, low-side Nch MOS FET, and Bi-CMOS driver
in a single HSOP-36 package.
Features
For Automotive application
Built-in low on state resistance MOS FET.
(Pch: 16 mMax., Nch: 11 mMax.)
Pch MOS FET is adopted on the high-side, and the charge pump noise was lost.
Built-in protection circuit of Thermal shut-down (TSD), Low Voltage Inhit (LVI), Overvoltage Detection (OVD)
and Overcurrent Detection.
Built-in diagnostic function.
Built-in cross-conduction protection.
Small Surface mounting package: HSOP-36
Block Diagram
Reverce battery
protection device
VBAT Vz
Cp
VB1
M
VBS1
VCC VBS2
VB2
OUT1
Pch MOS
Dr.
Dr.
Nch MOS
LVI, OVD
Overcurrent detection
TSD
Logic
Pch MOS
Dr.
OUT2
Dr.
Nch MOS
PGND1
PWM INA INB DIAG LGND
V30
C1
PGND2
Pull-up in the Microcomputer
R1 power supply
Microcomputer
R07DS0044EJ0300 Rev.3.00
Sep 01, 2010
www.DataSheet.in
Page 1 of 16


Renesas Electronics Components Datasheet

R2J25953 Datasheet

H-Bridge Control High Speed Power Switching

No Preview Available !

R2J25953
Outline
36 19
TAB1
TAB3
TAB2
Preliminary
1 18
Pin Description
Pin No.
1 to 3
4
5
6
7
8
9
10
11
12
13
14
15
16 to 18
19 to 21
Pin name
PGND1
NC
OUT1
PWM
INA
INB
GND
LGND
GND
DIAG
NC
OUT2
NC
PGND2
VB2
Description
Power GND1
No connect
Internally corrected to TAB1
PWM input
A input
B input
Internally corrected to TAB3
IC GND
Internally corrected to TAB3
Diagnostic output (open drain)
No connect
Internally corrected to TAB2
No connect
Power GND2
MOS FET power supply 2
Pin No.
22
23
24
25
26
27
28
29
30
31
32
33
34 to 36
TAB1
TAB2
TAB3
Pin name
NC
OUT2
NC
VCC
VBS2
GND
V30
GND
VBS1
NC
OUT1
NC
VB1
OUT1
OUT2
GND
Description
No connect
Internally corrected to TAB2
No connect
IC power supply
VB2 sense
Internally corrected to TAB3
IC bias voltage (3.3 V)
Internally corrected to TAB3
VB1 sense
No connect
Internally corrected to TAB1
No connect
MOS FET power supply 1
MOS FET output 1
MOS FET output 2
IC tab GND
R07DS0044EJ0300 Rev.3.00
Sep 01, 2010
www.DataSheet.in
Page 2 of 16


Part Number R2J25953
Description H-Bridge Control High Speed Power Switching
Maker Renesas Technology
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R2J25953 Datasheet PDF





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