R2J25953 Key Features
- For Automotive application
- Built-in low on state resistance MOS FET. (Pch: 16 m Max., Nch: 11 m Max.)
- Pch MOS FET is adopted on the high-side, and the charge pump noise was lost
- Built-in protection circuit of Thermal shut-down (TSD), Low Voltage Inhit (LVI), Overvoltage Detection (OVD) and Overcur
- Built-in diagnostic function
- Built-in cross-conduction protection
- Small Surface mounting package: HSOP-36
