900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




Renesas Electronics Components Datasheet

RJH60D7DPK Datasheet

IGBT

No Preview Available !

Preliminary Datasheet
RJH60D7DPK
600V - 50A - IGBT
Application: Inverter
R07DS0165EJ0400
Rev.4.00
Apr 19, 2012
Features
Short circuit withstand time (5 s typ.)
Low collector to emitter saturation voltage
VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C)
Built in fast recovery diode (100 ns typ.) in one package
Trench gate and thin wafer technology
High speed switching
tf = 50 ns typ. (at VCC = 300 V, VGE = 15 V, IC = 50 A, Rg = 5 , Ta = 25°C, inductive load)
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name: TO-3P)
C
12 3
1. Gate
G
2. Collector
3. Emitter
E
Absolute Maximum Ratings
Item
Collector to emitter voltage / diode reverse voltage
Gate to emitter voltage
Collector current
Tc = 25°C
Tc = 100°C
Collector peak current
Collector to emitter diode forward current
Collector to emitter diode forward peak current
Collector dissipation
Junction to case thermal resistance (IGBT)
Junction to case thermal resistance (Diode)
Junction temperature
Storage temperature
Notes: 1. PW 10 s, duty cycle 1%
2. Value at Tc = 25C
Symbol
VCES / VR
VGES
IC
IC
ic(peak) Note1
iDF
iDF(peak) Note1
PC Note2
j-c Note2
j-cd Note2
Tj
Tstg
Ratings
600
±30
90
50
200
30
120
300
0.42
2.1
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
W
°C/ W
°C/ W
°C
°C
R07DS0165EJ0400 Rev.4.00
Apr 19, 2012
Page 1 of 9


Renesas Electronics Components Datasheet

RJH60D7DPK Datasheet

IGBT

No Preview Available !

RJH60D7DPK
Electrical Characteristics
Item
Collector to emitter breakdown
voltage
Zero gate voltage collector current
/ Diode reverse current
Gate to emitter leak current
Gate to emitter cutoff voltage
Collector to emitter saturation voltage
Input capacitance
Output capacitance
Reveres transfer capacitance
Total gate charge
Gate to emitter charge
Gate to collector charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Short circuit withstand time
Symbol
VBR(CES)
ICES / IR
IGES
VGE(off)
VCE(sat)
VCE(sat)
Cies
Coes
Cres
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Etotal
tsc
FRD forward voltage
FRD reverse recovery time
FRD reverse recovery charge
FRD peak reverse recovery current
Notes: 3. Pulse test
VF
trr
Qrr
Irr
Min
600
4.0
3.0
Preliminary
Typ
1.6
1.8
3000
160
85
130
20
45
60
46
190
50
1.1
0.6
1.7
5.0
1.4
100
0.18
4.2
Max
5
±1
6.0
2.2
1.9
(Ta = 25°C)
Unit Test Conditions
VIC =10 A, VGE = 0
A VCE = 600 V, VGE = 0
A VGE = ±30 V, VCE = 0
V VCE = 10 V, IC = 1 mA
V IC = 50 A, VGE = 15 V Note3
V IC = 90 A, VGE = 15 V Note3
pF VCE = 25 V
pF VGE = 0
pF f = 1 MHz
nC VGE = 15 V
nC VCE = 300 V
nC IC = 50 A
ns VCC = 300 V
ns VGE = 15 V
ns IC = 50 A
ns Rg = 5 
mJ(Inductive load)
mJ
mJ
s VCC 360 V, VGE = 15 V
V IF = 30 A Note3
ns IF = 30 A
C diF/dt = 100 A/s
A
R07DS0165EJ0400 Rev.4.00
Apr 19, 2012
Page 2 of 9


Part Number RJH60D7DPK
Description IGBT
Maker Renesas Technology
PDF Download

RJH60D7DPK Datasheet PDF






Similar Datasheet

1 RJH60D7DPK IGBT
Renesas Technology
2 RJH60D7DPM IGBT
Renesas
3 RJH60D7DPQ-E0 IGBT
Renesas





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy