Datasheet4U Logo Datasheet4U.com

RJK0390DPA - Silicon N Channel Power MOS FET

Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples.

You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment.

Features

  • High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 1.7 m typ. (at VGS = 10 V).
  • Pb-free.
  • Halogen-free.
  • REJ03G1823-0130 Rev.1.30 May 12, 2010 Outline.

📥 Download Datasheet

Datasheet preview – RJK0390DPA

Datasheet Details

Part number RJK0390DPA
Manufacturer Renesas Electronics
File Size 145.17 KB
Description Silicon N Channel Power MOS FET
Datasheet download datasheet RJK0390DPA Datasheet
Additional preview pages of the RJK0390DPA datasheet.

📁 Similar Datasheet

Other Datasheets by Renesas Technology

Full PDF Text Transcription

Click to expand full text
Preliminary www.DataSheet4U.com Datasheet RJK0390DPA Silicon N Channel Power MOS FET Power Switching Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 1.7 m typ. (at VGS = 10 V)  Pb-free  Halogen-free      REJ03G1823-0130 Rev.1.30 May 12, 2010 Outline RENESAS Package code: PWSN0008DC-A (Package name: WPAK(2)) 5 6 7 8 D D D D 5 6 7 8 4 G 4 3 2 1 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S S S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1.
Published: |