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RJK03N2DPA Datasheet Built in SBD N Channel Power MOS FET

Manufacturer: Renesas

Overview

RJK03N2DPA 30V, 40A, 4.0mΩmax.

Built in SBD N Channel Power MOS FET High Speed Power.

Key Features

  • High speed switching.
  • Capable of 4.5 V gate drive.
  • Low drive current.
  • High density mounting.
  • Low on-resistance.
  • Pb-free.
  • Halogen-free Outline Preliminary Datasheet R07DS0783EJ0200 Rev.2.00 Feb 12, 2013.