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RJK03N8DNS Datasheet Silicon N Channel Power MOS FET

Manufacturer: Renesas

Overview

Preliminary Datasheet RJK03N8DNS Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching R07DS0789EJ0100 Rev.1.

Key Features

  • High speed switching.
  • Capable of 4.5 V gate drive.
  • Low drive current.
  • High density mounting.
  • Low on-resistance RDS(on) = 4.6 m typ. (at VGS = 8.0 V).
  • Pb-free.
  • Halogen-free Outline.