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Renesas Electronics Components Datasheet

RJK0656DPB Datasheet

Silicon N Channel Power MOS FET

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RJK0656DPB
60V, 40A, 5.6mmax.
Silicon N Channel Power MOS FET
Power Switching
Features
High speed switching
Low drive current
Low on-resistance
RDS(on) = 4.5 mtyp. (at VGS = 10 V)
Pb-free
Halogen-free
High density mounting
Outline
RENESAS Package code: PTZZ0005DA-A
(Package name: LFPAK)
5
1 234
4
G
Preliminary Datasheet
R07DS1054EJ0200
(Previous: REJ03G1882-0100)
Rev.2.00
Apr 09, 2013
5
D
SSS
123
1, 2, 3 Source
4 Gate
5 Drain
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
VDSS
VGSS
ID
ID(pulse)Note1
IDR
IAP Note 2
EAS Note 2
Pch Note3
Channel to Case Thermal Resistance
ch-C
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW 10 s, duty cycle 1%
2. Value at L=10uH, Tch = 25C, Rg 50
3. Tc = 25C
Ratings
60
20
40
160
40
40
12
65
1.92
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
C/W
C
C
R07DS1054EJ0200 Rev.2.00
Apr 09, 2013
Page 1 of 6


Renesas Electronics Components Datasheet

RJK0656DPB Datasheet

Silicon N Channel Power MOS FET

No Preview Available !

RJK0656DPB
Preliminary
Electrical Characteristics
Item
Drain to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate Resistance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse recovery time
Notes: 4. Pulse test
(Ta = 25°C)
Symbol Min Typ Max Unit
Test Conditions
V(BR)DSS
60
V ID = 10 mA, VGS = 0 V
IGSS — — 0.1 A VGS = 20 V, VDS = 0 V
IDSS — — 1 A VDS = 60 V, VGS = 0 V
VGS(off)
2.0
4.0
V VDS = 10 V, ID = 1 mA
RDS(on) — 4.5 5.6 mID = 20 A, VGS = 10 V Note4
|yfs|
— 58 —
S ID = 20 A, VDS = 10 V Note4
Ciss
— 3000 —
pF VDS = 10 V, VGS = 0 V,
Coss
— 680 —
pF f = 1 MHz
Crss
— 175 —
pF
Rg
— 0.5 —
Qg — 40 — nC VDD = 25 V, VGS = 10 V,
Qgs — 13 — nC ID = 40 A
Qgd — 7.0 — nC
td(on)
tr
td(off)
tf
VDF
trr
— 16 — ns VGS = 10 V, ID = 20 A,
— 9.0 — ns VDD 30 V, RL = 1.5 ,
— 36 — ns Rg = 4.7
— 12 — ns
— 0.8 1.1 V IF = 40 A, VGS = 0 V Note4
— 44 — ns IF = 40 A, VGS = 0 V
diF/ dt = 100 A/ s
R07DS1054EJ0200 Rev.2.00
Apr 09, 2013
Page 2 of 6


Part Number RJK0656DPB
Description Silicon N Channel Power MOS FET
Maker Renesas Technology
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