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RJK1001DPN-E0 Description

RJK1001DPN-E0 N-Channel MOS FET 100 V, 80 A, 5.5.

RJK1001DPN-E0 Key Features

  • High speed switching
  • Low drive current
  • Low on-resistance RDS(on) = 4.4 m typ. (at VGS = 10 V)
  • Package TO-220AB