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RJK1001DPN-E0 - N-Channel MOSFET

General Description

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Key Features

  • High speed switching.
  • Low drive current.
  • Low on-resistance RDS(on) = 4.4 m typ. (at VGS = 10 V).
  • Package TO-220AB Outline.

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Full PDF Text Transcription (Reference)

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RJK1001DPN-E0 N-Channel MOS FET 100 V, 80 A, 5.5 m Features  High speed switching  Low drive current  Low on-resistance RDS(on) = 4.4 m typ. (at VGS = 10 V)  Package TO-220AB Outline RENESAS Package code: PRSS0004AG-A (Package name: TO-220AB) 4 123 1G Preliminary Datasheet R07DS0619EJ0200 Rev.2.00 Aug 24, 2012 2, 4 D 1. Gate 2. Drain 3. Source 4. Drain S 3 Absolute Maximum Ratings Item Symbol Drain to source voltage VDSS Gate to source voltage VGSS Drain current Drain peak current ID ID (pulse) Note1 Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation IDR IAP Note2 EAS Note2 Pch Note3 Channel to case thermal impedance ch-c Channel temperature Tch Storage temperature Tstg Notes: 1. PW  10 s, duty cycle  1% 2.