RJK1002DPN-E0 Description
RJK1002DPN-E0 N-Channel MOS FET 100 V, 70 A, 7.6.
RJK1002DPN-E0 Key Features
- High speed switching
- Low drive current
- Low on-resistance RDS(on) = 6.0 m typ. (at VGS = 10 V)
- Package TO-220AB
RJK1002DPN-E0 is N-Channel MOS FET manufactured by Renesas .
RJK1002DPN-E0 N-Channel MOS FET 100 V, 70 A, 7.6.