RJL6014DPP - Silicon N Channel MOS FET

Renesas Technology

RJL6014DPP Datasheet Preview — Preview of RJL6014DPP PDF

Datasheet Details

Part number	RJL6014DPP
Manufacturer	Renesas ↗ Technology
File Size	139.36 KB
Description	Silicon N Channel MOS FET
Datasheet	RJL6014DPP_RenesasTechnology.pdf

RJL6014DPP Product details

Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples.

Features

Built-in fast recovery diode trr = 180 ns typ. (at IF = 15 A, VGS = 0, diF/dt = 100 A/s, Ta = 25 C).
Low on-resistance RDS(on) = 0.52  typ. (at ID = 7.5 A, VGS = 10 V, Ta = 25 C).
Low leakage current.
High speed switching R07DS0262EJ0200 (Previous: REJ03G1853-0100) Rev.2.00 Mar 01, 2011 Outline.

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Published: Jun 28, 2012 |