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RJL6032DPP-M0 - Silicon N Channel MOS FET

General Description

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Key Features

  • Low on-state resistance RDS(on) = 3.3  typ. (at ID = 1 A, VGS = 10 V, Ta = 25C).
  • High speed switching.
  • Built in fast recovery diode R07DS0250EJ0100 Rev.1.00 Jan 27, 2010 Outline.

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Preliminary Datasheet RJL6032DPP-M0 Silicon N Channel MOS FET High Speed Power Switching Features  Low on-state resistance RDS(on) = 3.3  typ. (at ID = 1 A, VGS = 10 V, Ta = 25C)  High speed switching  Built in fast recovery diode R07DS0250EJ0100 Rev.1.00 Jan 27, 2010 Outline RENESAS Package code: PRSS0003AF-A (Package name: TO-220FL) D G 1. Gate 2. Drain 3. Source 1 2 3 S Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Avalanche current Channel dissipation Channel to case thermal Impedance Channel temperature Storage temperature Notes: 1. Pulse width limited by safe operating area. 2. Value at Tc = 25C 3. STch = 25C, Tch  150C www.DataSheet.