Datasheet4U Logo Datasheet4U.com

RJL60S5DPE - 600V - 20A - SJ MOS FET

General Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples.

You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment.

Key Features

  • Superjunction MOSFET.
  • Built-in fast recovery diode.
  • Low on-resistance RDS(on) = 0.150  typ. (at ID = 10 A, VGS = 10 V, Ta = 25C).
  • High speed switching R07DS0817EJ0001 Rev.0.01 Jun 21, 2012 Outline.

📥 Download Datasheet

Datasheet Details

Part number RJL60S5DPE
Manufacturer Renesas
File Size 105.94 KB
Description 600V - 20A - SJ MOS FET
Datasheet download datasheet RJL60S5DPE Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
RJL6013DPE N-Channel Power MOSFET Renesas
RJL-001 Single 10/100 BASE-TX Filtered Connector Module Taimag
RJL5012DPE N-Channel Power MOSFET Renesas
RJL5012DPP Silicon N Channel MOS FET Renesas
RJL5012DPP-M0 Silicon N Channel MOS FET Renesas

Other Datasheets by Renesas

Part Number Description
RJL6012DPE Silicon N Channel MOS FET High Speed Power Switching
RJL6013DPP Silicon N Channel MOS FET High Speed Power Switching
RJL6014DPP Silicon N Channel MOS FET
RJL6015DPK Silicon N Channel MOS FET High Speed Power Switching
RJL6018DPK Silicon N Channel MOS FET High Speed Power Switching

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Preliminary Datasheet RJL60S5DPE 600V - 20A - SJ MOS FET High Speed Power Switching Features  Superjunction MOSFET  Built-in fast recovery diode  Low on-resistance RDS(on) = 0.150  typ. (at ID = 10 A, VGS = 10 V, Ta = 25C)  High speed switching R07DS0817EJ0001 Rev.0.01 Jun 21, 2012 Outline RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1) ) 4 1. Gate 2. Drain 3. Source 4. Drain D G 1 2 3 S Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. Limited by Tch max. 2. Value at Tc = 25C 3. STch = 25C, Tch  150C www.DataSheet.