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April 2010 Renesas Electronics
Power MOSFETs and IGBT for PDP
Merits
Power MOSFET Low ON resistance Low Qg High avalanche tolerance IGBT Low VCE (sat) High-speed switching
PDP System PDP trends
Scan IC
Power device
High breakdown voltage Low resistance High speed switching Wide MOSFET line-ups High Speed IGBT
Y Sustain circuit Panel
X Sustain circuit
High Intensity
High pressure Gas
High Efficiency
Addressing IC
Optimum FET Low Cost
TV/PC Signal PDP Signal processing Timing control Power supply
IGBT
Product Lineup
Power MOSFET
P/N H7N1005LS H7N1004LS H5N2301PF H5N2306PF H5N2305PF H5N2509P H5N2503P H5N3004P H5N3007LS H5N3003P H5N3504P VDSS (V) 100 100 230 230 230 250 250 300 300 300 350 Maximum Rating ID (A) 15 30 25 30 35 30 50 25 25 40 20 VGS (V) ±20 ±20 ±30 ±30 ±30 ±30 ±30 ±30
RJP3065DPP Datasheet
