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RJP6085DPN
Silicon N Channel IGBT High Speed Power Switching
Features
• High speed switching • Low collector to emitter saturation voltage REJ03G1863-0100 Rev.1.00 Nov 09, 2009
Outline
RENESAS Package code: PRSS0004AC-A) (Package name: TO-220AB)
4 C
G
1. Gate 2. Collector 3. Emitter 4. Collector (Flange)
E
1
2
3
Absolute Maximum Ratings
(Ta = 25°C)
Item Collector to Emitter voltage Gate to Emitter voltage Collector current Collector peak current Collector dissipation Junction to case thermal impedance Junction temperature Storage temperature Notes: 1. Pulse width limited by safe operating area. 2. Value at Tc = 25°C Symbol VCES VGES IC IC(peak) Note1 PC Note2 θj-c Note2 Tj Tstg Ratings 600 ±30 40 80 178.5 0.
RJP6085DPN Datasheet
