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RJP6085DPN - Silicon N-Channel IGBT

Key Features

  • High speed switching.
  • Low collector to emitter saturation voltage REJ03G1863-0100 Rev.1.00 Nov 09, 2009 Outline.

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www.DataSheet4U.com RJP6085DPN Silicon N Channel IGBT High Speed Power Switching Features • High speed switching • Low collector to emitter saturation voltage REJ03G1863-0100 Rev.1.00 Nov 09, 2009 Outline RENESAS Package code: PRSS0004AC-A) (Package name: TO-220AB) 4 C G 1. Gate 2. Collector 3. Emitter 4. Collector (Flange) E 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Collector to Emitter voltage Gate to Emitter voltage Collector current Collector peak current Collector dissipation Junction to case thermal impedance Junction temperature Storage temperature Notes: 1. Pulse width limited by safe operating area. 2. Value at Tc = 25°C Symbol VCES VGES IC IC(peak) Note1 PC Note2 θj-c Note2 Tj Tstg Ratings 600 ±30 40 80 178.5 0.