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TBB1016 - Twin Built in Biasing Circuit MOSFET

Features

  • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space.
  • Very useful for total tuner cost reduction.
  • Suitable for World Standard Tuner RF amplifier.
  • High gain; PG = 32 dB at 200 MHz.
  • Low noise; NF = 1.0 dB at 200 MHz.
  • Power supply voltage: 5 V Outline.

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Datasheet Details

Part number TBB1016
Manufacturer Renesas
File Size 176.26 KB
Description Twin Built in Biasing Circuit MOSFET
Datasheet download datasheet TBB1016 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TBB1016 Twin Built in Biasing Circuit MOS FET IC VHF/VHF RF Amplifier Preliminary Datasheet R07DS0318EJ0400 Rev.4.00 Jan 10, 2014 Features • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space. • Very useful for total tuner cost reduction. • Suitable for World Standard Tuner RF amplifier. • High gain; PG = 32 dB at 200 MHz • Low noise; NF = 1.0 dB at 200 MHz • Power supply voltage: 5 V Outline RENESAS Package code: PTSP0006JA-A (Package name: CMPAK-6) 4 5 6 3 2 1 Notes: 1. Marking is “RM”. 2. TBB1016 is indivisual type number of RENESAS TBBFET. 1. Drain(1) 2. Source 3. Drain(2) 4. Gate-1(2) 5. Gate-2 6.
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