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RTC6649E - Power Amplifier

General Description

The RTC6649E is a power amplifier (PA) designed for 2.4~2.5GHz frequency range, compatible with 802.11b/g/n wireless LAN system.

The device is manufactured based on advanced InGaP/GaAs HBT (Hetero-junction Bipolar Transistor) process.

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Datasheet Details

Part number RTC6649E
Manufacturer RichWave
File Size 292.47 KB
Description Power Amplifier
Datasheet download datasheet RTC6649E Datasheet

Full PDF Text Transcription for RTC6649E (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for RTC6649E. For precise diagrams, and layout, please refer to the original PDF.

RTC6649E V1.0 Data Sheet Sep 2011 DESCRIPTION The RTC6649E is a power amplifier (PA) designed for 2.4~2.5GHz frequency range, compatible with 802.11b/g/n wireless LAN sys...

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4~2.5GHz frequency range, compatible with 802.11b/g/n wireless LAN system. The device is manufactured based on advanced InGaP/GaAs HBT (Hetero-junction Bipolar Transistor) process. The amplifier consists of 3 gain stages with inter-stage matching, build-in input matching network, and a power detector for close loop power control operation. In 802.11g mode (OFDM 64QAM, 54Mbps), it is capable to provide a low EVM (Error-Vector magnitude) of 3% at +26dBm and 23.5dBm linear output power by single supply voltage 5V and 3.3V, respectively. The device is provided in a tiny industrial standard 16-lead surface mount package QFN 3mm

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