2SAR554R - Midium Power Transistors

ROHM

Key Features

s 1) Low saturation voltage, typically VCE (sat) = -0.4V (Max. ) (IC / IB= -500mA / -25mA) 2) High speed switching.
Structure PNP Silicon epitaxial planar transistor.

2SAR554R midium power transistors by ROHM - Datasheet Preview

Datasheet Details

Part number	2SAR554R
Manufacturer	ROHM
File Size	341.04 KB
Description	Midium Power Transistors
Datasheet	2SAR554R Datasheet

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Midium Power Transistors (-80V / -1.5A) 2SAR554R  Features 1) Low saturation voltage, typically VCE (sat) = -0.4V (Max.) (IC / IB= -500mA / -25mA) 2) High speed switching  Structure PNP Silicon epitaxial planar transistor  Applications Driver  Dimensions (Unit : mm) TSMT3 (3) (1) (2) Abbreviated symbol : MH  Packaging specifications Type Package TSMT3 Code TL Basic ordering unit (pieces) 3000  Absolute maximum ratings (Ta = 25C) Parameter Symbol Limits Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulsed Power dissipation Junction temperature Range of storage temperature VCBO VCEO VEBO IC ICP *1 PD *2 PD *3 Tj Tstg -80 -80 -6 -1.5 -3 0.5 1.0 150 -55 to 150 *1 Pw=10ms, Single Pulse *2 Mounted on a recommended land.