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Rohm Semiconductor Electronic Components Datasheet

2SC4713K Datasheet

Transistor

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High frequency amplifier transistor,
RF switching (6V, 50mA)
2SC4774 / 2SC4713K
Features
1) Very low output-on resistance (Ron).
2) Low capacitance.
Absolute maximum ratings (Ta=25C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Limits
12
6
3
50
0.2
150
55 to +150
Unit
V
V
V
mA
W
°C
°C
Packaging specifications and hFE
Type
Package
hFE
Marking
Code
Basic ordering unit (pieces)
Denotes hFE
2SC4774
UMT3
S
BM
T106
3000
2SC4713K
SMT3
S
BM
T146
3000
Dimensions (Unit : mm)
2SC4774
2.0
0.3
(3)
0.9
0.2 0.7
(2) (1)
0.65 0.65
1.3
ROHM : UMT3
EIAJ : SC-70
0.15
Each lead has same dimensions
(1) Emitter
(2) Base
(3) Collector
2SC4713K
2.9
0.4
(3)
1.1
0.8
(2) (1)
0.95 0.95
1.9
0.15
ROHM : SMT3
EIAJ : SC-59
Each lead has same dimensions
(1) Emitter
(2) Base
(3) Collector
Electrical characteristics (Ta=25C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Output-on resistance
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
Ron
Min. Typ. Max. Unit
Conditions
12 − − V IC=10μA
6 − − V IC=1mA
3 − − V IE=10μA
− − 0.5 μA VCB=10V
− − 0.5 μA VEB=2V
− − 0.3 V IC/IB=10mA/1mA
180 560 VCE/IC=5V/5mA
300 800
MHz VCE=5V, IE= −10mA, f=200MHz
1 1.7 pF VCB=10V, IE=0A, f=1MHz
2 − Ω IB=3mA, VI=100mVrms, f=500kHz
This product might cause chip aging and breakdown under the large electrified environment.
Please consider to design ESD protection circuit.
www.rohm.com
c 2009 ROHM Co., Ltd. All rights reserved.
1/2
2009.12 - Rev.C
Free Datasheet http://www.datasheet4u.net/


Rohm Semiconductor Electronic Components Datasheet

2SC4713K Datasheet

Transistor

No Preview Available !

2SC4774 / 2SC4713K
Electrical characteristic curves
10
Ta=25°C
8
6
4
2
35mA
30mA
25mA
20mA
15mA
10mA
5mA
0 IB=0μA
012345
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.1 Grounded emitter output
characteristics ( )
1000
500
Ta=25°C
VCE=5V
200
100
50
20
10
0.1 0.2
0.5 1 2
5 10 20
COLLECTOR CURRENT : IC (mA)
50
Fig.4 DC current gain vs. collector current
20
Ta=25°C
f=1MHz
10
5
2
1
0.5
0.2
0.1 0.2
0.5 1 2
5 10 20 50
COLLECTOR TO BASE VOLTAGE : VCB (V)
Fig.7 Collector output capacitance
vs. voltage
50
Ta=25°C
40
30
20
0.5mA0.4mA
0.3mA
0.2mA
0.1mA
10
0 IB=0mA
0 0.1 0.2 0.3 0.4 0.5
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.2 Grounded emitter output
characteristics ( )
1000
500
Ta=25°C
IC/IB=10
200
100
50
20
10
5
0.1 0.2
0.5 1 2
5 10 20
COLLECTOR CURRENT : IC (mA)
50
Fig.5 Collector-emitter saturation
voltage vs. collector current
20
Ta=25°C
f=1MHz
10
5
2
1
0.5
0.2
0.1 0.2
0.5 1 2
5 10 20 50
COLLECTOR TO BASE VOLTAGE : VCB (V)
Fig.8 Back capacitance voltage
Data Sheet
50
VCE=5V
40
30
20
10
0
0 0.4 0.8 1.2 1.6 2.0
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.3 Grounded emitter propagation
characteristics
2000
Ta=25°C
VCE=5V
1000
500
200
100
50
20
0.1 0.2
0.5 1 2
5 10 20
COLLECTOR CURRENT : IC (mA)
50
Fig.6 Gain bandwidth product vs.
collector current
50
Ta=25°C
f=500kHz
υi=100mVrms
RL=1kΩ
20
10
5
2
1
0.1 0.2 0.5
12 5
10 20
BASS CURRENT : IB (mA)
50
Fig.9 Output-on resistance vs.
base current
www.rohm.com
c 2009 ROHM Co., Ltd. All rights reserved.
2/2
2009.12 - Rev.C
Free Datasheet http://www.datasheet4u.net/


Part Number 2SC4713K
Description Transistor
Maker Rohm
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2SC4713K Datasheet PDF






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