1) Electrical characteristics of DC current gain hFE is flat. 2) High breakdown voltage. (BVCEO= 160V(Min. ), at IC= 1mA) 3) High fT. (Typ. 150MHz, at VCE= 10V, IE=0.2A, f=100MHz) 4) Wide SOA. øï÷Þ¿-» øî÷ݱ´´»½¬±® øí÷Û³.
1.5A) 2SA2005 Structure PNP Silicon Epitaxial Planar Transistor External dimensions (Unit : mm) ÌÑóîîðÚÒ ïðòð íòî ìòë îòè Features 1) Electrical characteristics of DC current gain hFE is flat. 2) High breakdown voltage. (BVCEO= 160V(Min.), at IC= 1mA) 3) High fT. (Typ. 150MHz, at VCE= 10V, IE=0.2A, f=100MHz) 4) Wide SOA.