Datasheet4U Logo Datasheet4U.com

B1236A - Power Transistor

Datasheet Summary

Features

  • High breakdown voltage. (BVCEO = 160V) 2) Low collector output capacitance. (Typ. 30pF at VCB = 10V) 3) High transition frequency. (fT = 50MHZ) 4) Complements the 2SD1918 / 2SD1857A.
  • Absolute maximum ratings (Ta = 25C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector 2SB1275 power dissipation 2SB1236A Junction temperature Symbol VCBO VCEO VEBO IC PC Tj Limits.
  • 160.
  • 160.
  • 5.
  • 1.5.
  • 3 1 10 1 15.

📥 Download Datasheet

Datasheet preview – B1236A

Datasheet Details

Part number B1236A
Manufacturer ROHM
File Size 107.98 KB
Description Power Transistor
Datasheet download datasheet B1236A Datasheet
Additional preview pages of the B1236A datasheet.

📁 Similar Datasheet

  • B1236 - Silicon PNP Power Transistor (INCHANGE)
  • B1230 - PNP / NPN Epitaxial Planar Silicon Transistors (Sanyo)
  • B1232 - 2SB1232 (Sanyo Semicon Device)
  • B1235 - 2SB1235PNP/NPN Epitaxial Planar Silicon Transistors (Sanyo)
  • B120 - Low Voltage X-Ray Tube (Ferranti)
  • B120 - 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER (Diodes Incorporated)
  • B120 - highly integrated single chip interface controller (Genesis Microchip)
  • B120-E3 - Surface Mount Schottky Barrier Rectifier (Vishay)
  • B120-M3 - Surface Mount Schottky Barrier Rectifier (Vishay)
  • B1200CALRP - SIDACtor Protection Thyristors (Littelfuse)
Other Datasheets by Rohm

Full PDF Text Transcription

Click to expand full text
Power Transistor (160V, 1.5A) 2SB1275 / 2SB1236A Features 1) High breakdown voltage.(BVCEO = 160V) 2) Low collector output capacitance. (Typ. 30pF at VCB = 10V) 3) High transition frequency.(fT = 50MHZ) 4) Complements the 2SD1918 / 2SD1857A. Absolute maximum ratings (Ta = 25C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector 2SB1275 power dissipation 2SB1236A Junction temperature Symbol VCBO VCEO VEBO IC PC Tj Limits −160 −160 −5 −1.5 −3 1 10 1 150 Storage temperature Tstg −55 to +150 ∗ 1 Single pulse Pw=100ms ∗ 2 Printed circuit board 1.7mm thick, collector plating 1cm2 or larger.
Published: |