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B1412 - 2SB1412

Features

  • 1) Low VCE(sat). VCE(sat) =.
  • 0.35V (Typ. ) (IC/IB =.
  • 4A /.
  • 0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SD2118. zStructure Epitaxial planar type PNP silicon transistor zDimensions (Unit : mm) 2SB1412 ROHM : CPT3 EIAJ : SC-63 ∗ Denotes hFE (1) Base (2) Collector (3) Emitter zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Limits Collector-base voltage VCBO.
  • 30 Collector-emitter voltage VCEO.
  • 20 Emitter-base voltag.

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Datasheet Details

Part number B1412
Manufacturer ROHM
File Size 125.32 KB
Description 2SB1412
Datasheet download datasheet B1412 Datasheet
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Low frequency transistor (−20V,−5A) 2SB1412 zFeatures 1) Low VCE(sat). VCE(sat) = −0.35V (Typ.) (IC/IB = −4A / −0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SD2118.
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