B1412 - 2SB1412

Rohm

Datasheet Details

1) Low VCE(sat). VCE(sat) =.
0.35V (Typ. ) (IC/IB =.
4A /.
0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SD2118. zStructure Epitaxial planar type PNP silicon transistor zDimensions (Unit : mm) 2SB1412 ROHM : CPT3 EIAJ : SC-63 ∗ Denotes hFE (1) Base (2) Collector (3) Emitter zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Limits Collector-base voltage VCBO.
30 Collector-emitter voltage VCEO.
20 Emitter-base voltag.

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