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Rohm Semiconductor Electronic Components Datasheet

BD35269HFN Datasheet

Nch FET Ultra LDO

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BD35269HFN pdf
High Performance Regulators for PCs
Nch FET Ultra LDO
for Desktop PCs
BD35269HFN
No.11030ECT12
Description
The BD35269HFN ultra low-dropout linear chipset regulator operates from a very low input supply, and offers ideal
performance in low input voltage to low output voltage applications. It incorporates a built-in N-MOSFET power transistor to
minimize the input-to-output voltage differential to the ON resistance (RON MAX=400mΩ) level. By lowering the dropout
voltage in this way, the regulator realizes high current output (Iomax=1.0A) with reduced conversion loss, and thereby
obviates the switching regulator and its power transistor, choke coil, and rectifier diode. Thus, the 35269HFN designed to
enable significant package profile downsizing and cost reduction. In BD35269HFN, The NRCS (soft start) function enables a
controlled output voltage ramp-up, which can be programmed to whatever power supply sequence is required.
Features
1) Internal high-precision reference voltage circuit (0.65V±1%)
2) Internal high-precision output voltage circuit
3) Built-in VCC undervoltage lockout circuit (VCC=3.80V)
4) NRCS (soft start) function reduces the magnitude of in-rush current
5) Internal Nch MOSFET driver offers low ON resistance (250mΩ typ)
6) Built-in short circuit protection (SCP)
7) Built-in current limit circuit (1.0A min)
8) Built-in thermal shutdown (TSD) circuit
9) Small package HSON8 : 2.9mm×3.0mm×0.6mm
10) Tracking function
Applications
Notebook computers, Desktop computers, LCD-TV, DVD, Digital appliances
Absolute maximum ratings (Ta=25)
Parameter
Symbol
Ratings
Unit
Input Voltage 1
Input Voltage 2
Maximum Output Current
VCC
VIN
IO
+6.0 *1
+6.0 *1
1*1
V
V
A
Enable Input Voltage
Power Dissipation 1
VEN -0.3+6.0 V
Pd1 0.63 *2 W
Power Dissipation 2
Pd2 1.35 *3 W
Power Dissipation 3
Pd3 1.75*4 W
Operating Temperature Range
Topr
-10+100
Storage Temperature Range
Tstg
-55+125
Maximum Junction Temperature Tjmax
+150
*1 Should not exceed Pd.
*2 Reduced by 5.04mW/for each increase in Ta25
(when mounted on a 70mm×70mm×1.6mm glass-epoxy board, 1-layer, copper foil area : less than 0.2%)
*3 Reduced by 10.8mW/for each increase in Ta25
(when mounted on a 70mm×70mm×1.6mm glass-epoxy board, 1-layer,copper foil area : less than 7.0%)
*4 Reduced by 14.0mW/for each increase in Ta25
(when mounted on a 70mm×70mm×1.6mm glass-epoxy board, 1-layer,copper foil area : less than 65.0%)
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
1/15
2011.01 - Rev.C


Rohm Semiconductor Electronic Components Datasheet

BD35269HFN Datasheet

Nch FET Ultra LDO

No Preview Available !

BD35269HFN pdf
BD35269HFN
Technical Note
Operating Voltage (Ta=25)
Parameter
Symbol
Ratings
Min. Max.
Input Voltage 1
Input Voltage 2
VCC 4.3
VIN 1.5
5.5
VCC-1 *5
Output Voltage Setting Range
IO
1.2 (fixed)
Enable Input Voltage
VEN -0.3
NRCS Capacity
CNRCS
0.001
*5 VCC and VIN do not have to be implemented in the order listed.
This product is not designed for use in radioactive environments.
5.5
1
Unit
V
V
V
V
µF
Electrical Characteristics (Unless otherwise specified, Ta=25, VCC=5V, VEN=3V, VIN=1.7V)
Parameter
Symbol
Min.
Limits
Typ.
Max.
Unit
Condition
Bias Current
ICC - 0.7 1.2 mA
VCC Shutdown Mode Current
IST -
0 10 µA VEN=0V
Output Voltage
IO 2.0
-
-A
Feedback Voltage 1
VOS1
1.188
1.200
1.212
V
Feedback Voltage 2
VOS2
1.176
1.200
1.224
V Tj=-10 to 100
Line Regulation 1
Reg.l1
-
0.1 0.5 %/V VCC=4.3V to 5.5V
Line Regulation 2
Reg.l2
-
0.1 0.5 %/V VIN=1.5V to 3.3V
Load Regulation
Output ON Resistance
Standby Discharge Current
[ENABLE]
Enable Pin Input Voltage High
Reg.L
RON
IDEN
ENHIGH
-
-
1
2
0.5 10 mV IO=0 to 1A
250
400
mΩ
IO=1A,VIN=1.2V,
Tj=-10 to 100
- - mA VEN=0V, VO=1V
- -V
Enable Pin Input Voltage Low
ENLOW
0
- 0.8 V
Enable Input Bias Current
[NRCS]
NRCS Charge Current
IEN -
7 10 µA VEN=3V
INRCS
12
20
28 µA
NRCS Standby Voltage
[UVLO]
VCC Undervoltage Lockout
Threshold Voltage
VCC Undervoltage Lockout
Hysteresis Voltage
VIN Undervoltage Lockout
Threshold Voltage
[SCP]
SCP Start up Voltage
VSTB
-
0 50 mV VEN=0V
VCCUVLO
VCCHYS
VINUVLO
3.5
100
0.72
3.8
160
0.84
4.1
220
0.96
V VCC:Sweep-up
mV VCC:Sweep-down
V VIN:Sweep-up
VOSCP VO×0.3 VO×0.4 VO×0.5
V
SCP Threshold Voltage
TSCP
45
90 200 µsec
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
2/15
2011.01 - Rev.C


Part Number BD35269HFN
Description Nch FET Ultra LDO
Maker Rohm
Total Page 18 Pages
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BD35269HFN pdf
BD35269HFN Datasheet PDF
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