BD6757KN
Key Features
- Features 1) Subminiature grid array package: 5.0 5.0 1.2mm3 (BD6889GU) 2) DMOS output allowing a range power supply: 2.0V to 8.0V (BD6757KN) 3) Low ON-Resistance Power MOS output: Full-ON Drive block with 1.3Ω Typ. and Linear Constant-Current Drive block with 0.9Ω Typ. (BD6757KN, BD6889GU) 4) Built-in two digital NPN transistor circuits for photo-interrupter waveform shaping: Input-dividing type with output pull-up resistance (BD6757KN) 5) Built-in four digital NPN transistor circuits for photo-interrupter waveform shaping: Input-dividing type with output pull-up resistance (BD6889GU) 6) Built-in four digital PNP transistor circuits for photo-interrupter waveform shaping: Input-dividing type with output pull-down resistance (BD6889GU) 7) Built-in voltage-regulator circuit for photo-interrupter (BD6889GU) 8) Built-in two-step output current setting switch for the Linear Constant-Current Drive block (BD6757KN) 9) 0.9V±2% high-precision reference voltage output 10) Constant-Current Drive block features phase compensation capacitor-free design 11) Built-in ±3% high-precision Linear Constant-Current Driver 12) Built-in charge pump circuit for the DMOS gate voltage drive(BD6757KN) 13) UVLO (Under Voltage Lockout Protection) function 14) Built-in TSD (Thermal Shut Down) circuit 15) Standby current consumption: 0μA (Typ.)
