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Rohm Semiconductor Electronic Components Datasheet

BR24G01FJ-3 Datasheet

Serial EEPROM Series Standard EEPROM

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BR24G01FJ-3 pdf
Datasheet
Serial EEPROM Series Standard EEPROM
I2C BUS EEPROM (2-Wire)
BR24G01-3
General Description
BR24G01-3 is a serial EEPROM of I2C BUS Interface Method
Features
Packages W(Typ) x D(Typ) x H(Max)
„ Completely conforming to the world standard I2C
BUS.
All controls available by 2 ports of serial clock
(SCL) and serial data (SDA)
„ Other devices than EEPROM can be connected to
the same port, saving microcontroller port
„ 1.6V to 5.5V Single Power Source Operation most
suitable for battery use
„ 1.6V to 5.5V wide limit of operating voltage, possible
FAST MODE 400kHz operation
„ Page Write Mode useful for initial value write at
factory shipment
„ Self-timed Programming Cycle
„ Low Current Consumption
„ Prevention of Write Mistake
¾ Write (Write Protect) Function added
¾ Prevention of Write Mistake At Low Voltage
„ More than 1 million write cycles
„ More than 40 years data retention
„ Noise filter built in SCL / SDA terminal
„ Initial delivery state FFh
DIP-T8
9.30mm x 6.50mm x 7.10mm
TSSOP-B8
3.00mm x 6.40mm x 1.20mm
SOP8
5.00mm x 6.20mm x 1.71mm
TSSOP-B8J
3.00mm x 4.90mm x 1.10mm
SOP- J8
4.90mm x 6.00mm x 1.65mm
MSOP8
2.90mm x 4.00mm x 0.90mm
BR24G01-3
Capacity Bit Format
Type
BR24G01-3
BR24G01F-3
BR24G01FJ-3
1Kbit
128×8
BR24G01FV-3
BR24G01FVT-3
BR24G01FVJ-3
BR24G01FVM-3
BR24G01NUX-3
SSOP-B8
3.00mm x 6.40mm x 1.35mm
VSON008X2030
2.00mm x 3.00mm x 0.60mm
Figure 1.
Power Source
Voltage
1.6V to 5.5V
Package
DIP-T8
SOP8
SOP-J8
SSOP-B8
TSSOP-B8
TSSOP-B8J
MSOP8
VSON008X2030
Product structureSilicon monolithic integrated circuit
www.rohm.com
©2013 ROHM Co., Ltd. All rights reserved.
TSZ2211114001
This product has no designed protection against radioactive rays
1/33
TSZ02201-0R2R0G100160-1-2
31.May.2013 Rev.003


Rohm Semiconductor Electronic Components Datasheet

BR24G01FJ-3 Datasheet

Serial EEPROM Series Standard EEPROM

No Preview Available !

BR24G01FJ-3 pdf
BR24G01-3
Datasheet
Absolute Maximum Ratings (Ta=25)
Parameter
Symbol
Rating
Supply Voltage
VCC
Power Dissipation
Pd
Storage Temperature
Tstg
Operating Temperature Topr
-0.3 to +6.5
450 (SOP8)
450 (SOP-J8)
300 (SSOP-B8)
330 (TSSOP-B8)
310 (TSSOP-B8J)
310 (MSOP8)
300 (VSON008X2030)
800 (DIP-T8)
-65 to +150
-40 to +85
Input Voltage /
Output Voltage
Junction
Temperature
Electrostatic discharge
voltage
(human body model)
Tjmax
VESD
-0.3 to Vcc+1.0
150
-4000 to +4000
Unit Remark
V
Derate by 4.5mW/°C when operating above Ta=25°C
Derate by 4.5mW/°C when operating above Ta=25°C
Derate by 3.0mW/°C when operating above Ta=25°C
mW
Derate by 3.3mW/°C when operating above Ta=25°C
Derate by 3.1mW/°C when operating above Ta=25°C
Derate by 3.1mW/°C when operating above Ta=25°C
Derate by 3.0mW/°C when operating above Ta=25°C
Derate by 8.0mW/°C when operating above Ta=25°C
The Max value of Input Voltage/Output Voltage is not over 6.5V.
V When the pulse width is 50ns or less, the Min value of Input
Voltage/Output Voltage is not lower than -0.8V.
Junction temperature at the storage condition
V
Memory Cell Characteristics (Ta=25, Vcc=1.6V to 5.5V)
Parameter
Write Cycles (1)
Data Retention (1)
Min
1,000,000
40
Limit
Typ
-
-
Max
-
-
(1) Not 100% TESTED
Unit
Times
Years
Recommended Operating Ratings
Parameter
Symbol
Power Source Voltage
VCC
Input Voltage
VIN
Rating
1.6 to 5.5
0 to Vcc
Unit
V
DC Characteristics (Unless otherwise specified, Ta=-40to +85, Vcc=1.6V to 5.5V)
Parameter
Limit
Symbol
Unit
Min Typ Max
Conditions
Input High Voltage1
Input Low Voltage1
Input High Voltage2
Input Low Voltage2
Output Low Voltage1
Output Low Voltage2
VIH1 0.7VCC - Vcc+1.0 V 1.7VVcc5.5V
VIL1 -0.3 (2)
- +0.3Vcc V 1.7VVcc5.5V
VIH2
0.8Vcc
- Vcc+1.0 V 1.6VVcc1.7V
VIL2 -0.3 (2)
- +0.2Vcc V 1.6VVcc1.7V
VOL1
-
- 0.4 V IOL=3.0mA, 2.5VVcc5.5V (SDA)
VOL2
-
- 0.2 V IOL=0.7mA, 1.6VVcc2.5V (SDA)
Input Leakage Current
ILI -1 - +1 µA VIN=0 to Vcc
Output Leakage Current
Supply Current (Write)
ILO -1
ICC1
-
Supply Current (Read)
ICC2
-
Standby Current
ISB -
(2) When the pulse width is 50ns or less, it is -0.8V.
- +1 µA VOUT=0 to Vcc (SDA)
-
2.0
mA
Vcc=5.5V, fSCL=400kHz, tWR=5ms,
Byte write, Page write
-
0.5
mA
Vcc=5.5V, fSCL=400kHz
Random read, current read, sequential read
-
2.0
µA
Vcc=5.5V, SDASCL=Vcc
A0,A1,A2=GND,WP=GND
www.rohm.com
©2013 ROHM Co., Ltd. All rights reserved.
TSZ2211115001
2/33
TSZ02201-0R2R0G100160-1-2
31.May.2013 Rev.003


Part Number BR24G01FJ-3
Description Serial EEPROM Series Standard EEPROM
Maker Rohm
Total Page 30 Pages
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BR24G01FJ-3 pdf
BR24G01FJ-3 Datasheet PDF
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