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Rohm Semiconductor Electronic Components Datasheet

BR24G512-3A Datasheet

I2C BUS EEPROM

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BR24G512-3A pdf
Datasheet
Serial EEPROM Series Standard EEPROM
I2C BUS EEPROM (2-Wire)
BR24G512-3A
General Description
BR24G512-3A is a serial EEPROM of I2C BUS Interface Method
Features
All controls available by 2 ports of serial clock (SCL)
and serial data (SDA)
Other devices than EEPROM can be connected to the
same port, saving microcontroller port
1.7V to 5.5V single power source operation most
suitable for battery use
1.7V to 5.5wide limit of operating voltage, possible
1MHz operation
Page Write Mode useful for initial value write at factory
shipment
Self-timed Programming Cycle
Low Current Consumption
Prevention of Write Mistake
Write (Write Protect) Function added
Prevention of Write Mistake at Low Voltage
More than 1 million write cycles
More than 40 years data retention
Noise filter built in SCL / SDA terminal
Initial delivery state FFh
Packages W(Typ) x D(Typ)x H(Max)
DIP-T8
9.30mm x 6.50mm x 7.10mm
SOP-J8
4.90mm x 6.00mm x 1.65mm
SOP8
5.00mm x 6.20mm x 1.71mm
TSSOP-B8
3.00mm x 6.40mm x 1.20mm
Figure 1.
Page Write
Number of
Pages
Product number
128 Bytes
BR24G512-3A
BR24G512-3A
Capacity
Bit
Format
Type
BR24G512-3A
Power Supply
Voltage
Package
DIP-T8
512Kbit
64K×8
BR24G512F-3A
BR24G512FJ-3A
1.7V to 5.5V
SOP8
SOP-J8
BR24G512FVT-3A
TSSOP-B8
Product structureSilicon monolithic integrated circuit
.www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
TSZ2211114001
This product has no designed protection against radioactive rays
1/30
TSZ02201-0R2R0G100360-1-2
24.May.2014 Rev.004


Rohm Semiconductor Electronic Components Datasheet

BR24G512-3A Datasheet

I2C BUS EEPROM

No Preview Available !

BR24G512-3A pdf
BR24G512-3A
Datasheet
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Rating
Supply Voltage
Vcc
Power Dissipation
Pd
Storage Temperature
Tstg
Operating Temperature Topr
-0.3 to +6.5
0.45 (SOP8)
0.45 (SOP-J8)
0.33 (TSSOP-B8)
0.80 (DIP-T8)
-65 to +150
-40 to +85
Input Voltage /
Output Voltage
Junction
Temperature
Electrostatic discharge
voltage
(human body model)
Tjmax
VESD
-0.3 to Vcc+1.0
150
-4000 to +4000
Unit
V
W
°C
°C
V
°C
Remark
Derate by 4.5mW/°C when operating above Ta=25°C
Derate by 4.5mW/°C when operating above Ta=25°C
Derate by 3.3mW/°C when operating above Ta=25°C
Derate by 8.0mW/°C when operating above Ta=25°C
The Max value of Input voltage/Output voltage is not over 6.5V.
When the pulse width is 50ns or less, the Min value of Input
voltage/Output voltage is not lower than -1.0V.
Junction temperature at the storage condition
V
Memory Cell Characteristics (Ta=25°C, VCC=1.7V to 5.5V)
Parameter
Limit
Min Typ
Write Cycles (1)
1,000,000 -
Data Retention (1)
40 -
(1) Not 100% TESTED
Max
-
-
Unit
Times
Years
Recommended Operating Ratings
Parameter
Symbol
Power Source Voltage
Vcc
Input Voltage
VIN
Rating
1.7 to 5.5
0 to Vcc
Unit
V
DC Characteristics (Unless otherwise specified, Ta=-40°C to +85°C, Vcc =1.7V to 5.5V)
Parameter
Limit
Symbol
Min
Typ
Max Unit
Conditions
Input High Voltage1
VIH1 0.7Vcc
- Vcc+1.0 V
Input Low Voltage1
Output Low Voltage1
VIL1
VOL1
-0.3(2)
-
-
+0.3Vcc
V
-
0.4
V
IOL=3.0mA,
2.5VVcc5.5V (SDA)
Output Low Voltage2
VOL2
-
-
0.2
V
IOL=0.7mA,
1.7VVcc2.5V (SDA)
Input Leakage Current
ILI -1 - +1 μA VIN=0 to Vcc
Output Leakage Current
ILO -1 - +1 μA VOUT=0 to Vcc (SDA)
Supply Current (Write)
ICC1
Supply Current (Read)
ICC2
Standby Current
ISB
(2) When the pulse width is 50ns or less, it is -1.0V.
-
-
-
-
4.5
mA
Vcc=5.5V,fSCL=1MHz, tWR=5ms,
Byte write, Page write
Vcc=5.5V,fSCL=1MHz
- 2.0 mA Random read, current read,
Sequential read
-
3.0
μA
Vcc=5.5V, SDASCL=Vcc
A0,A1,A2=GND,WP=GND
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
TSZ2211115001
2/30
TSZ02201-0R2R0G100360-1-2
24.May.2014 Rev.004


Part Number BR24G512-3A
Description I2C BUS EEPROM
Maker Rohm
Total Page 30 Pages
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BR24G512-3A pdf
BR24G512-3A Datasheet PDF
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