BR24G512-3A
Datasheet
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Rating
Supply Voltage
Vcc
Power Dissipation
Pd
Storage Temperature
Tstg
Operating Temperature Topr
-0.3 to +6.5
0.45 (SOP8)
0.45 (SOP-J8)
0.33 (TSSOP-B8)
0.80 (DIP-T8)
-65 to +150
-40 to +85
Input Voltage /
Output Voltage
Junction
Temperature
Electrostatic discharge
voltage
(human body model)
‐
Tjmax
VESD
-0.3 to Vcc+1.0
150
-4000 to +4000
Unit
V
W
°C
°C
V
°C
Remark
Derate by 4.5mW/°C when operating above Ta=25°C
Derate by 4.5mW/°C when operating above Ta=25°C
Derate by 3.3mW/°C when operating above Ta=25°C
Derate by 8.0mW/°C when operating above Ta=25°C
The Max value of Input voltage/Output voltage is not over 6.5V.
When the pulse width is 50ns or less, the Min value of Input
voltage/Output voltage is not lower than -1.0V.
Junction temperature at the storage condition
V
Memory Cell Characteristics (Ta=25°C, VCC=1.7V to 5.5V)
Parameter
Limit
Min Typ
Write Cycles (1)
1,000,000 -
Data Retention (1)
40 -
(1) Not 100% TESTED
Max
-
-
Unit
Times
Years
Recommended Operating Ratings
Parameter
Symbol
Power Source Voltage
Vcc
Input Voltage
VIN
Rating
1.7 to 5.5
0 to Vcc
Unit
V
DC Characteristics (Unless otherwise specified, Ta=-40°C to +85°C, Vcc =1.7V to 5.5V)
Parameter
Limit
Symbol
Min
Typ
Max Unit
Conditions
Input High Voltage1
VIH1 0.7Vcc
- Vcc+1.0 V
Input Low Voltage1
Output Low Voltage1
VIL1
VOL1
-0.3(2)
-
-
+0.3Vcc
V
-
0.4
V
IOL=3.0mA,
2.5V≦Vcc≦5.5V (SDA)
Output Low Voltage2
VOL2
-
-
0.2
V
IOL=0.7mA,
1.7V≦Vcc＜2.5V (SDA)
Input Leakage Current
ILI -1 - +1 μA VIN=0 to Vcc
Output Leakage Current
ILO -1 - +1 μA VOUT=0 to Vcc (SDA)
Supply Current (Write)
ICC1
Supply Current (Read)
ICC2
Standby Current
ISB
(2) When the pulse width is 50ns or less, it is -1.0V.
-
-
-
-
4.5
mA
Vcc=5.5V,fSCL=1MHz, tWR=5ms,
Byte write, Page write
Vcc=5.5V,fSCL=1MHz
- 2.0 mA Random read, current read,
Sequential read
-
3.0
μA
Vcc=5.5V, SDA・SCL=Vcc
A0,A1,A2=GND,WP=GND
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TSZ22111・15・001
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TSZ02201-0R2R0G100360-1-2
24.May.2014 Rev.004
