Rohm Semiconductor Electronic Components Datasheet

BR24G512-3A Datasheet

I2C BUS EEPROM

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Datasheet

Serial EEPROM Series Standard EEPROM

I2C BUS EEPROM (2-Wire)

BR24G512-3A

General Description

BR24G512-3A is a serial EEPROM of I2C BUS Interface Method

Features

 All controls available by 2 ports of serial clock (SCL)

and serial data (SDA)

 Other devices than EEPROM can be connected to the

same port, saving microcontroller port

 1.7V to 5.5V single power source operation most

suitable for battery use

 1.7V to 5.5Ｖwide limit of operating voltage, possible

1MHz operation

 Page Write Mode useful for initial value write at factory

shipment

 Self-timed Programming Cycle

 Low Current Consumption

 Prevention of Write Mistake

 Write (Write Protect) Function added

 Prevention of Write Mistake at Low Voltage

 More than 1 million write cycles

 More than 40 years data retention

 Noise filter built in SCL / SDA terminal

 Initial delivery state FFh

Packages W(Typ) x D(Typ)x H(Max)

DIP-T8

9.30mm x 6.50mm x 7.10mm

SOP-J8

4.90mm x 6.00mm x 1.65mm

SOP8

5.00mm x 6.20mm x 1.71mm

TSSOP-B8

3.00mm x 6.40mm x 1.20mm

Figure 1.

Page Write

Number of

Pages

Product number

128 Bytes

BR24G512-3A

Capacity

Bit

Format

Type

BR24G512-3A

Power Supply

Voltage

Package

DIP-T8

512Kbit

64K×8

BR24G512F-3A

BR24G512FJ-3A

1.7V to 5.5V

SOP8

SOP-J8

BR24G512FVT-3A

TSSOP-B8

○ Product structure：Silicon monolithic integrated circuit

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Rohm Semiconductor Electronic Components Datasheet

BR24G512-3A Datasheet

I2C BUS EEPROM

No Preview Available !

BR24G512-3A

Datasheet

Absolute Maximum Ratings (Ta=25°C)

Parameter

Symbol

Rating

Supply Voltage

Vcc

Power Dissipation

Storage Temperature

Tstg

Operating Temperature Topr

-0.3 to +6.5

0.45 (SOP8)

0.45 (SOP-J8)

0.33 (TSSOP-B8)

0.80 (DIP-T8)

-65 to +150

-40 to +85

Input Voltage /

Output Voltage

Junction

Temperature

Electrostatic discharge

voltage

(human body model)

‐

Tjmax

VESD

-0.3 to Vcc+1.0

150

-4000 to +4000

Unit

°C

Remark

Derate by 4.5mW/°C when operating above Ta=25°C

Derate by 3.3mW/°C when operating above Ta=25°C

Derate by 8.0mW/°C when operating above Ta=25°C

The Max value of Input voltage/Output voltage is not over 6.5V.

When the pulse width is 50ns or less, the Min value of Input

voltage/Output voltage is not lower than -1.0V.

Junction temperature at the storage condition

Memory Cell Characteristics (Ta=25°C, VCC=1.7V to 5.5V)

Parameter

Limit

Min Typ

Write Cycles (1)

1,000,000 -

Data Retention (1)

40 -

(1) Not 100% TESTED

Max

Unit

Times

Years

Recommended Operating Ratings

Parameter

Symbol

Power Source Voltage

Vcc

Input Voltage

VIN

Rating

1.7 to 5.5

0 to Vcc

Unit

DC Characteristics (Unless otherwise specified, Ta=-40°C to +85°C, Vcc =1.7V to 5.5V)

Parameter

Limit

Symbol

Min

Typ

Max Unit

Conditions

Input High Voltage1

VIH1 0.7Vcc

- Vcc+1.0 V

Input Low Voltage1

Output Low Voltage1

VIL1

VOL1

-0.3(2)

+0.3Vcc

0.4

IOL=3.0mA,

2.5V≦Vcc≦5.5V (SDA)

Output Low Voltage2

VOL2

0.2

IOL=0.7mA,

1.7V≦Vcc＜2.5V (SDA)

Input Leakage Current

ILI -1 - +1 μA VIN=0 to Vcc

Output Leakage Current

ILO -1 - +1 μA VOUT=0 to Vcc (SDA)

Supply Current (Write)

ICC1

Supply Current (Read)

ICC2

Standby Current

ISB

(2) When the pulse width is 50ns or less, it is -1.0V.

4.5

Vcc=5.5V,fSCL=1MHz, tWR=5ms,

Byte write, Page write

Vcc=5.5V,fSCL=1MHz

- 2.0 mA Random read, current read,

Sequential read

3.0

μA

Vcc=5.5V, SDA・SCL=Vcc

A0,A1,A2=GND,WP=GND

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BR24G512-3A Datasheet

I2C BUS EEPROM

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I2C BUS EEPROM

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