C5511 - 2SC5511

Features

1) Electrical characteristics of DC current gain hFE is flat. 2) High breakdown voltage. (BVCEO=160V(Min. ), at IC=1mA) 3) High fT. (Typ. 150MHz, at VCE=10V, IE=.
0.2A, f=100MHz) 4) Wide SOA. (1)Base (2)Collector (3)Emitter 15.0 12.0 8.0 5.0 1.2 1.3 14.0 0.8 2.54 (1) (2) (3) 2.54 0.75 2.6 z.

Rohm

Datasheet Details

Part number	C5511
Manufacturer	ROHM
File Size	91.13 KB
Description	2SC5511
Datasheet	C5511 Datasheet
Additional preview pages of the C5511 datasheet.

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Full PDF Text Transcription

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2SC5511 Transistors www.datasheet4u.com For Audio Amplifier output - TV Velosity Modulation (160V, 1.5A) 2SC5511 zExternal dimensions (Unit : mm) TO-220FN 10.0 zStructure NPN Silicon Epitaxial Planar Transistor 4.5 φ3.2 2.8 zFeatures 1) Electrical characteristics of DC current gain hFE is flat. 2) High breakdown voltage. (BVCEO=160V(Min.), at IC=1mA) 3) High fT. (Typ. 150MHz, at VCE=10V, IE= −0.2A, f=100MHz) 4) Wide SOA. (1)Base (2)Collector (3)Emitter 15.0 12.0 8.0 5.0 1.2 1.3 14.0 0.8 2.54 (1) (2) (3) 2.54 0.75 2.6 zApplications Power amplifier Velosity modulation zAbsolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Limits 160 160 5 1.

Published: May 18, 2009 |