C5825 transistor equivalent, power transistor.
1) High speed switching. (Tf : Typ. : 30ns at IC = 3A)
2) Low saturation voltage, typically (Typ. : 200mV at IC = 2A, IB = 0.2mA)
3) Strong discharge power for inductive .
Low frequency amplifier High speed switching
zStructure NPN Silicon epitaxial planar transistor
zPackaging specificati.
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